This paper reports the results of modeling of electrical characteristics of midinfrared type II InAs/ GaSb strain layer superlattice ͑SLS͒ diode with p-on-n polarity. Bulk based model with the effective band gap of SLS material has been used in modeling of the experimental data. Temperature dependence of zero-bias resistance area product ͑R 0 A͒ and bias dependent dynamic resistance of the diode have been analyzed in detail to investigate dark current contributing mechanisms that are limiting the electrical performance of the diode. R 0 A of the diode is found to be limited by thermal diffusion currents at higher temperatures and Ohmic shunt resistance contribution limits it at low temperatures ϳ82 K.
We report on high operating temperature midwave infrared detectors based on type II InAs∕GaSb superlattices (SLs) with a p-on-n polarity. All InAs∕GaSb SLs photodiodes reported so far have a n-on-p polarity with a thin InAs n-type top contact, that is incompatible with most present day readout integrated circuits. Current-voltage measurements reveal dark current densities of ∼5×10−7A∕cm2 (82K) and 0.18A∕cm2 (240K) at −0.1V. R0A products were equal to ∼1×105Ωcm2 (82K) and 0.24Ωcm2 (240K). Zero-biases D* were estimated to be 2×1012 and 2×109 Jones at 82 and 240K, respectively.
A model is presented to calculate the surface leakage currents due to Zener tunnelling in n'-p mercury cadmium telluride (MCT) photovoltaic (PV) diodes. The expressions describing the effect of fixed interface charge density (Q,) on zero-bias resistance-area product (&A) are developed for situations where the interface charges due to passivant accumulate the MCT surface.Calculations for detectors with 9.55, 10.60 and 11.55 pm cut-off wavelengths operating at liquid-nitrogen temperature show that I-V characteristics, and t h u s U@ products, of these diodes have a strong dependence on Q,. For example, on p-type MCT, with carrier concentration (MA) of up to 5 x 10" the passivant with Q, of greater than 3.2 x 10'ocm-2 would degrade the performance of these detectors significantly. The experimental results agree reasonably well u p to moderate fields (i.e. up to 400-500 mV of reverse bias) with the predictions of this model
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