Photo-electric characteristics of HgCdTe tunnel MIS photo-detectors

Abstract

The photo-electric characteristics of tunnel MIS photo-detectors based on Hg 1−x Cd x Te for x ≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation dielectric layer with thickness allowing for free carrier tunneling was grown on the metal-semiconductor interface. Dielectric layers composed of native oxides, native fluorides, SiO 2 or Al 2 O 3 were investigated. Values as high as 6.2 A W −1 for spectral responsivity and 5.3 × 10 10 cm Hz 1/2 W −1 for specific detectivity were obtained.

Metal-Insulator-Semiconductor Photodetectors

“…Different passivation insulator layers were also used to suppress Fermi level pinning of HgCdTe MIS photodetectors [ 73 ]. These insulator layers included the native oxide, Al 2 O 3 , and SiO 2 layers.…”

Photoelectrical characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy

“…Up to date, photoelectric characteristics of MIS structures based on HgCdTe have been studied only for the bulk material [5,12,28,29]. Photovoltaic characteristics of MIS structures based on heteroepitaxial HgCdTe obtained by molecular beam epitaxy (HES MBE MCT) are still practically unexplored.…”