Proceedings of the Forty-Eighth IEEE Holm Conference on Electrical Contacts
DOI: 10.1109/holm.2002.1040845
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Scattering parameter model of low level electrical contacts in electro-mechanical microwave switches-a switch manufacturer approach

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Cited by 10 publications
(6 citation statements)
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“…Contact resistance has been shown both experimentally and numerically to remain equal to its dc value at extremely high frequencies (for these switches, higher than 20 THz) [22], [23]. Hence, our experiments were simplified by measuring the dc contact resistance rather than S-parameters.…”
Section: B Experimental Setupmentioning
confidence: 99%
“…Contact resistance has been shown both experimentally and numerically to remain equal to its dc value at extremely high frequencies (for these switches, higher than 20 THz) [22], [23]. Hence, our experiments were simplified by measuring the dc contact resistance rather than S-parameters.…”
Section: B Experimental Setupmentioning
confidence: 99%
“…The behavior of contacts can be approximated by Rcont, Ccont representing the contact resistance, contact capacitance parameters respectively [19].…”
Section: Circuit Model For Micro-scale Contactsmentioning
confidence: 99%
“…The test apparatus is a circuit with two external ports, the input port (port 1) and the output port (port 2) for the S parameters measurement. Using the vector network analyser we measure the parameters of the scattering matrix [S] [6]: ) dB were made in the frequency range from 0.1GHz to 18GHz and in the compression force range from 2g to 60g. The force results from MPI compression by a motor displacement in the vertical direction (z) with a low increment (10nm).…”
Section: Experimental Apparatusmentioning
confidence: 99%
“…In the same way, the authors [5] have investigated on a microwave model of an anisotropic conductive film Flip-Chip interconnection for high frequency applications. Kwiatkowski et al [6] have presented an improved model of the microwave contact to analyse the behaviour of an RF electromechanical coaxial switch and a metal contact RF MEMS switch. An experimental method was presented to determine the mapping between the DC contact resistance and RF characteristics in terms of a scattering parameters matrix.…”
mentioning
confidence: 99%
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