Abstract-This paper explores contact heating in microelectromechanical systems (MEMS) switches with contact spot sizes less than 100 nm in diameter. Experiments are conducted to demonstrate that contact heating causes a drop in contact resistance. However, existing theory is shown to over-predict heating for MEMS switch contacts because it does not consider ballistic transport of electrons in the contact. Therefore, we extend the theory and develop a predictive model that shows excellent agreement with the experimental results. It is also observed that mechanical cycling causes an increase in contact resistance. We identify this effect as related to the build-up of an insulating film and demonstrate operational conditions to prevent an increase in contact resistance. The improved understanding of contact behavior gained through our modeling and experiments allows switch performance to be improved.[1424]

We propose a technique to measure the opening time for micromachined switches and present substantial experimental data for switches with gold-gold contacts. The data demonstrate that contact opening time increases dramatically as apparent contact area increases or as pull-apart force or contact resistance decreases. A model of opening time is also presented with model parameters that fit the experimental data. Moreover, we show that transient mechanical vibrations can play an important role in reducing switch opening time.

Direct contact RF microelectromechanical systems switches have demonstrated excellent ultrawideband performance from dc to 100 GHz. However, they are prone to failures due to contact adhesion and arcing, particularly for pure-gold/pure-gold contacts. In this letter, we present a new contact design employing ball grid array (BGA) dimples that limit the effective contact area to a few tens of nanometers in diameter. We experimentally show the performance of the BGA dimple with pure-gold/pure-gold contacts and demonstrate RF power handling greater than 1 W during hot switching in excess of 100 million cycles.

We propose an extended finite element-boundary integral method (EFE-BI) to model the electromagnetic (EM) behavior of RF-MEMS switches over a wide frequency range from UHF to terahertz. Our new method integrates EM with finite element heat transfer analysis to extract heat dissipation on the micrometer-scale switch beam due to the non-uniform radio frequency (RF) current distribution. The developed EFE-BI technique is an extension of the standard finite element-boundary integral (FE-BI) method to allow for accurate characterization of RF-MEMS structures whose entire size is a small fraction of a wavelength (λ/250 or less) and may contain dimensions in the order of λ/50 000 or less. Our model predictions exhibit good agreement with experimental results obtained independent of the current study.

Air-suspension of transmission-line structures using microelectromechanical systems (MEMS) technology provides the effective means to suppress substrate losses for radio-frequency (RF) signals. However, heating of these lines augmented by skin effects can be a major concern for RF MEMS reliability. To understand this phenomenon, a thermal energy transport model is developed in a simple analytical form. The model accounts for skin effects that cause Joule heating to be localized near the surface of the RF transmission line. Here, the model is validated through experimental data by measuring the temperature rise in an air-suspended MEMS coplanar waveguide (CPW). For this measurement, a new experimental methodology is also developed allowing direct current (dc) electrical resistance thermometry to be adopted in an RF setup. The modeling and experimental work presented in this paper allow us to provide design rules for preventing thermal and structural failures unique to the RF operation of suspended MEMS transmission-line components. For example, increasing the thickness from 1 to 3 m for a typical transmission line design enhances power handling from 5 to 125 W at 20 GHz, 3.3 to 80 W at 50 GHz, and 2.3 to 56 W at 100 GHz (a 25-fold increase in RF power handling). [1737] Index Terms-Coplanar waveguides (CPWs), failure analysis, microelectromechanical devices, skin effect, transmission lines. I. INTRODUCTION L OW-LOSS and low-dispersion transmission-line structures are critical components in radio-frequency (RF)/microwave circuit design. Air-suspended transmission-line structures, with their suspension above the commonly used complementary metal-oxide-semiconductor (CMOS) or GaAs substrates, can serve as fundamental building blocks to achieve low-loss, low-noise signal transmission for monolithic integration of RF circuits and devices [1]-[5]. They often form microshield transmission lines [6]-[9] as shown in Fig. 1(a)-(c),