Scanning tunneling microscopy study of Si growth on a Si(111)<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msqrt><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msqrt></mml:math>×<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msqrt><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msqrt></mml:math>-B surface

Зотов, А. В.; Kulakov, M.A.; Bullemer, B.; Eisele, I.

doi:10.1103/physrevb.53.12902

Cited by 27 publications

(11 citation statements)

References 20 publications

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“…)R301-B surfaces, where at temperatures above 600 1C also hexagons were observed [29]. The dimensions of superlattice regions seem to be limited in the moment by the terrace length.…”

Section: Article In Pressmentioning

confidence: 97%

Formation of twinning-superlattice regions by artificial stacking of Si layers

Fissel¹,

Bugiel

Wang³

et al. 2006

Journal of Crystal Growth

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“…)R301-B surfaces, where at temperatures above 600 1C also hexagons were observed [29]. The dimensions of superlattice regions seem to be limited in the moment by the terrace length.…”

Section: Article In Pressmentioning

confidence: 97%

Formation of twinning-superlattice regions by artificial stacking of Si layers

Fissel¹,

Bugiel

Wang³

et al. 2006

Journal of Crystal Growth

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“…[10][11][12][13][14][15][16][17][18][19][20] The phase is also stable with respect to the deposition of Si overlayers which opens up the possibility of producing ordered ␦-doping. 2,[21][22][23][24][25][26][27] Some effort has been directed towards characterizing the Si(111)(ͱ3ϫͱ3)R30°-B phase. The assignment of surface core level shifts in photoemission measurements remains controversial, 19,[28][29][30] however, despite comparison with ab initio pseudopotential calculations.…”

Section: Introductionmentioning

confidence: 99%

Structure determination of the(3×3)R30°bor

et al. 1999

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A quantitative structural analysis of the system Si(111)(ͱ3ϫͱ3)R30°-B has been performed using photoelectron diffraction in the scanned energy mode. We confirm that the substitutional S 5 adsorption site is occupied and show that the interatomic separations to the three nearest-neighbor Si atoms are 1.98(Ϯ0.04) Å , 2.14(Ϯ0.13) Å , and 2.21(Ϯ0.12) Å . These correspond to the silicon atom immediately below the boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer. ͓S0163-1829͑99͒05819-1͔

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“…In this way the T 4 adatoms became part of the significant bulk nuclei without significant bonding to the neighboring Si adatoms in the nuclei. It has been reported that at T 400°C Si islands grow amorphous up to a certain critical size and then crystallize to form epitaxial islands with a thickness of two Si(111) bilayers [9], what is similar to the low temperature growth on undoped Si(7x7) [10]. From our RHEED investigations we suggest that in this stage the nuclei are mostly only 1 ML height.…”

Section: Modeling Of Stacking Fault Formationmentioning

confidence: 59%

“…The number of these defects should be strongly dependent on the boron coverage [9]. At lower boron coverage, boundaries between (7x7)-and (¥3x¥3)-superstructure domains are the main defects.…”

Section: A Rheed Investigations Of Intial Si Growth Stages As Functimentioning

confidence: 99%

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

Fissel

Krügener

Bugiel

et al. 2008

2008 Conference on Optoelectronic and Microelectronic Materials and Devices

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Epitaxial growth of silicon on heavily boron-doped Si(111) surface was investigated. In our experiments, we found a new growth mode in the very initial stage for boron-coverage below 0.5 monolayer (ML) likely associated with defect-induced nucleation of Si islands. The initially stage of growth on boroncovered Si(111) could be interpreted by a quasi van der Waals like epitaxy, where Si adatoms catch sites on the surface with only slightly deeper depression in the flat surface potential without significant bonding to the neighboring atoms. Deposition of Si at temperature below 800 K results in a layer-by-layer growth via nucleation and coalescence of two-bilayer Si islands on top of the initially formed van der Waals like buffer Si buffer layer, before the transition in the normal double layer growth mode occurred. The grown Si layers were found in twin position with respect to the underlying Si(111) substrate, resulting in a stacking fault in the substrate/layer interface. Structures with twin boundaries arranged periodically along the [111]-direction and separated by only a few Si double layers were obtained by repetition of a multi-step procedure several times. In such a way we obtained structures with regions of a twin repeat sequence ranging from 12 Si bilayers, corresponding to a twinning-superlattice, down to 4 bilayers, what is equivalent to a hexagonal 8H-Si polytype.

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Scanning tunneling microscopy study of Si growth on a Si(111)3×3-B surface

Cited by 27 publications

References 20 publications

Formation of twinning-superlattice regions by artificial stacking of Si layers

Formation of twinning-superlattice regions by artificial stacking of Si layers

Structure determination of the(3×3)R30°bor

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

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