Formation of twinning-superlattice regions by artificial stacking of Si layers

Ion implantation of boric molecules for silicon solar cells

“…During annealing the implanted boron might agglomerate at the amorphous/ crystalline interface. From molecular beam epitaxial experiments it is known that silicon epitaxy on highly boron-covered Si(111) surfaces can lead to the formation of stacking faults [26,27]. However, this effect is most likely not the cause of the stacking fault formation in this case, since it should be as pronounced for BF as for BF 2 , assuming B and F do not form any kind of interstitial clusters.…”

Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)

“…To date, the growth of homogeneous artificially stacked Si layers is restricted to small areas across a substrate [1]. This was assumed to be mainly caused by an inhomogeneous growth process due to surface defects, as reported recently [6].…”

“…Heterostructures consisting of only Si in different crystal structures (polytypes) have great potential for device application, since they could overcome most problems associated with difference in chemical composition of common heterostructures [1]. Unfortunately, non-cubic Si is formed only under some nonequilibrium conditions and there are no common approaches to realize different Si crystal structures in a controlled way across large area.…”

“…Some attempts are made to prepare artificially stacked Si structures, such as twinning-superlattices, by periodical variation of the MBE growth conditions [1,7]. To date, the growth of homogeneous artificially stacked Si layers is restricted to small areas across a substrate [1].…”

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

“…By alternating change of the growth conditions twinning-superlattices were grown. [6,7] This special behavior could open the way to create miscellaneous Si crystal structures (polytypes) with modified physical properties by an artificial stacking of Si MLs in an epitaxial growth process or heterostructures containing different Si polytypes [7]. Although the surface structure of boron covered Si(111) surfaces has been intensively studied, the Si epitaxial growth mode on boron covered Si it not well known.…”