Ion implantation of boric molecules for silicon solar cells

Krügener, Jan; Peibst, Robby; Bugiel, E.; Tetzlaff, D.; Kiefer, Fabian; Jestremski, Marcel; Brendel, Rolf; Osten, H. J.

doi:10.1016/j.solmat.2015.05.024

Cited by 10 publications

(15 citation statements)

References 30 publications

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“…and higher [10,11] The higher sheet resistance for II of BF 2 compared to II of elemental B possibly originates from a reduced boron activation in the presence of fluorine [16].…”

Section: Sheet and Contact Resistancementioning

confidence: 99%

“…Therefore, a much lower temperature budget is required for curing the P induced defects compared to the defects induced by elemental boron. Following our findings in [11], we chose a minimum temperature of 950°C for the annealing of the BF 2 implanted emitter. Annealing the P implant separately allows for a tailored process and more freedom in designing the phosphorous doping profile.…”

Section: Co-anneal Vs Implant-species Specific Annealmentioning

confidence: 99%

“…It has been shown recently that the substitution of B by BF 2 [11] or BF x [10] allows a reduction of the annealing temperature down to 950°C. Since solid-phase epitaxy supports the annealing of the amorphized surface, the formation of dislocation loops is much less pronounced.…”

Section: Introductionmentioning

confidence: 99%

“…However, as another explanation, inactive boron paired with Si interstitials (boron interstitial clusters, BICs) could still mediate recombination after annealing at temperatures of 950°C [12]. Although the studies on BF 2 implants for the emitter preparation show promising J 0e and lifetime values [11], no results on a full solar cell level have been published so far.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters

Kiefer

Krügener

Heinemeyer

et al. 2016

Solar Energy Materials and Solar Cells

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“…and higher [10,11] The higher sheet resistance for II of BF 2 compared to II of elemental B possibly originates from a reduced boron activation in the presence of fluorine [16].…”

Section: Sheet and Contact Resistancementioning

confidence: 99%

Section: Co-anneal Vs Implant-species Specific Annealmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters

Kiefer

Krügener

Heinemeyer

et al. 2016

Solar Energy Materials and Solar Cells

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“…Takeuchi et al have shown the feasibility of using polyatomic molecular decaborane (B 10 H 14 ) as a kind of B cluster to form shallow p + /n junctions . Recently, Krügener et al have used ion implantation for amorphizing species of BF x (x = 1, 2) to lower the thermal budget of annealing for formation of n‐type silicon solar cells . Aluminum is another p‐type dopant of Si, which is hardly ever used due to its lower solubility at the level of 2 × 10 19 cm −3 at 1100°C in comparison with that of B, 4.5 × 10 20 cm −3 at 1150°C .…”

Section: Introductionmentioning

confidence: 99%

Small Al cluster ion implantation into Si and 4H‐SiC

Zeng

Pelenovich

Ieshkin

et al. 2019

Rapid Comm Mass Spectrometry

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Rationale Continuously downscaling integrated circuit devices requires fabrication of shallower p‐n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current. Methods In this study to carry out low‐energy implantation into single crystalline silicon and 4H‐SiC samples we employ Aln− (n = 1–5) clusters with energy in the range of 5–20 keV. The Al clusters are obtained by Cs sputtering of Al rod. Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS; IONTOF TOF.SIMS‐5) is used to study aluminum and oxygen sputter depth profiles for different cluster sizes and implantation energies before and after annealing treatment. Results A distinguishable effect of the energy per atom in the cluster on reduction of the projected range Rp is revealed. The lowest Rp of 3 ± 1 nm has been achieved in SiC samples at the energy per atom of 1.66 keV. After annealing of Si samples, a considerable change in the Al profiles due to redistribution of Al atoms during motion of the front of recrystallization is observed. The influence of the number of atoms in the cluster at the same energy per atom within the experimental uncertainty is not observed. Conclusions The transient effects of the sputtering by the primary ion beam distort the shape of the Al profiles in Si samples. In the case of SiC, due to its relatively lower surface chemical activity, more informative TOF‐SIMS depth profiling of the shallow cluster implantation is feasible.

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Solar‐grade boron emitters by BF₃ plasma doping and role of the co‐implanted fluorine

Lanterne

Perchec

Coig

et al. 2015

Progress in Photovoltaics

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We investigate the electrical properties and dopant profiles of boron emitters performed by plasma immersion ion implantation from boron trifluoride (BF 3 ) gas precursor, thermally annealed and passivated by silicon oxide/silicon nitride stacks. High thermal budgets are required for doses compatible with screen-printed metal pastes, to reach very good activation rates. However, if good sheet resistances and saturation current densities may be obtained, we met strong limitations of the implied open-circuit voltage of the n-type Czochralski silicon substrates, which is incompatible with high-efficiency solar cells. Such limitations are not encountered with beamline where pure B + ions are implanted. Efforts on the passivation quality may improve the implied open-circuit voltage but are not sufficient. We provide experimental comparison between beamline and plasma immersion allowing us to discriminate the causes explaining this observation (implantation technique or ion specie used) and to infer our interpretation: The co-implantation of fluorine seems to indirectly impact the lifetime of the core substrate after thermal annealing.

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Ion implantation of boric molecules for silicon solar cells

Cited by 10 publications

References 30 publications

Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters

Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters

Small Al cluster ion implantation into Si and 4H‐SiC

Solar‐grade boron emitters by BF₃ plasma doping and role of the co‐implanted fluorine

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Ion implantation of boric molecules for silicon solar cells

Cited by 10 publications

References 30 publications

Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters

Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters

Small Al cluster ion implantation into Si and 4H‐SiC

Solar‐grade boron emitters by BF3 plasma doping and role of the co‐implanted fluorine

Contact Info

Product

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Solar‐grade boron emitters by BF₃ plasma doping and role of the co‐implanted fluorine