Scanning probe lithography approach for beyond CMOS devices

Durrani, Z. A. K.; Jones, Mervyn; Kaestner, Marcus; Höfer, Michael; Guliyev, Elshad; Ahmad, Ahmad; Ivanov, Tzvetan; Zoellner, Jens-Peter; Rangelow, Ivo W.

doi:10.1117/12.2012199

Cited by 18 publications

(30 citation statements)

References 25 publications

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“…The ability of rapid nanoscale manufacturing in single digit nanoscale, in a reproducible manner, has been identified as one of the most essential steps to enable future nanoelectronic, 46 nanoelectromechanical systems, photonic, and bio-nanotechnology-based devices. In this context, the establishment of two fundamental technologies for the sub-10 nm scale is required: lithography and pattern transfer.…”

Section: E Field Emission Scanning Probe Lithographymentioning

confidence: 99%

Review Article: Active scanning probes: A versatile toolkit for fast imaging and emerging nanofabrication

Rangelow

Ivanov

Ahmad

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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With the recent advances in the field of nanotechnology, measurement and manipulation requirements at the nanoscale have become more stringent than ever before. In atomic force microscopy, high-speed performance alone is not sufficient without considerations of other aspects of the measurement task, such as the feature aspect ratio, required range, or acceptable probe-sample interaction forces. In this paper, the authors discuss these requirements and the research directions that provide the highest potential in meeting them. The authors elaborate on the efforts toward the downsizing of self-sensed and self-actuated probes as well as on upscaling by active cantilever arrays. The authors present the fabrication process of active probes along with the tip customizations carried out targeting specific application fields. As promising application in scope of nanofabrication, field emission scanning probe lithography is introduced. The authors further discuss their control and design approach. Here, microactuators, e.g., multilayer microcantilevers, and macroactuators, e.g., flexure scanners, are combined in order to simultaneously meet both the range and speed requirements of a new generation of scanning probe microscopes.

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Section: E Field Emission Scanning Probe Lithographymentioning

confidence: 99%

Review Article: Active scanning probes: A versatile toolkit for fast imaging and emerging nanofabrication

Rangelow

Ivanov

Ahmad

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…As highly scaled Si nanowire (SiNW) can be used as the basis for SE / QD transistors operating at room temperature [15][16][17], it is possible to envisage a direct transition from SiNW FETs to SE / QD devices. Si NWs may then inherently provide the basis for a quantum effect 'beyond CMOS' technology [14]. This paper uses Si NWs to study the transition to increasingly dominant quantum behaviour.…”

Section: Introductionmentioning

confidence: 99%

Single-electron and quantum confinement limits in length-scaled silicon nanowires

2015

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Quantum-effects will play an important role in both future CMOS and 'beyond CMOS' technologies. By comparing single-electron transistors formed in unpatterned, uniform-width silicon nanowire devices with core widths from ~5 -40 nm, and gated lengths of 1 µm and ~50 nm, we show conditions under which these effects become significant. Coulomb blockade drain-source current-voltage characteristics, and single-electron current oscillations with gate voltage have been observed at room temperature. Detailed electrical characteristics have been measured from 8 -300 K.We show that while shortening the nanowire gate length to 50 nm reduces the likelihood of quantum dots to only a few, it increases their influence on the electrical characteristics. This highlights explicitly both the significance of quantum effects for understanding the electrical performance of nominally 'classical' SiNW devices and also their potential for new quantum effect 'beyond CMOS' devices. a) Electronic mail: z.durrani@imperial.ac.uk 2

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“…1,2,[16][17][18][19][20][21] Herein, a high nonuniform electric field, which causes a current of low energy electrons between the tip and sample, is applied for direct patterning of the calixarene resist. These low energy electrons (<50 eV), field emitted from the scanning probe tip apex (preliminary simulations provided in Ref.…”

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confidence: 99%

mentioning

confidence: 99%

“…1,2 Scaling the feature sizes down to 10 nm and below allows us to use quantum-based effects such as quantized excitations, Coulomb blockade, and single-electron tunneling. 2 However, state-of-the-art manufacturing methods are far away from meeting the requirements to generate, overlay, and inspect features in a single digit nanoregime. 3,4 In order to address this problem, we are working on scanning probe lithography (SPL) methods in which self-actuating and self-sensing active cantilever technology is applied.…”

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confidence: 99%

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Advanced electric-field scanning probe lithography on molecular resist using active cantilever

Kaestner

Aydogan

Ivanov

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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Scanning probe lithography approach for beyond CMOS devices

Cited by 18 publications

References 25 publications

Review Article: Active scanning probes: A versatile toolkit for fast imaging and emerging nanofabrication

Review Article: Active scanning probes: A versatile toolkit for fast imaging and emerging nanofabrication

Single-electron and quantum confinement limits in length-scaled silicon nanowires

Advanced electric-field scanning probe lithography on molecular resist using active cantilever

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