Scalable Approach for Amorphous Thin Silicon Films Near‐IR Laser‐Induced Crystallization Using Nickel Absorption Layer

Abstract

Technology for thin polycrystalline silicon films preparation is crucial for development of novel semiconductor devices, including flexible electronics. A method for thin polycrystalline silicon film preparation utilizing deposited nickel absorption layer which allows use of inexpensive 1064 nm pulsed YAG: Nd laser for laser annealing of magnetron-sputtered amorphous silicon is reported here. Film morphology changes are visualized with scanning electron microscopy, its chemical composition and Ni fate upon laser irradiation are studied using X-ray energy dispersion analysis and secondary ion mass spectrometry. Silicon crystalline structure changes and its homogeneity are characterized using Raman spectroscopy utilizing mapped spectral measurements. Range of laser radiation energy fluence (J cm À2 ) is established which allowed for preparation of fully polycrystalline silicon film with crystalline silicon Raman peak position and width comparable to that of single-crystalline material. Nickel film is found to ablate substantially upon irradiation, leaving remains that can be easily removed by chemical etching.

CaCO3-based carriers with prolonged release properties for antifungal drug delivery to hair follicles

“…Numerical analysis of the obtained spectra was performed using a Python software initially developed for Raman spectra analysis 84 utilizing Pathos library for multithreaded processing. [84][85][86] After baseline subtraction by asymmetric least squares algorithm, 87 the obtained spectra were recalculated to isoenergetic (X-axis presented in wavenumbers; however, all numbers in the text are presented in nm) in order to get symmetrical fluorescence peaks, which were then fitted with Gaussian functions. Most peaks from a total of 10 that were present in natural urine (without Gf delivery) were identified according to information on known fluorophores published elsewhere.…”

Heat transfer estimation during laser-assisted metal-induced crystallization of amorphous silicon films

“…Using of such substrates (glass or plastic) has two main advantages: decrease of the end product cost and extension of the possible application toward wearable devices. An original approach to amorphous silicon film crystallization on glass [2] and polyimide [3] substrates was developed by our group. This approach using common fiber 1064 nm laser and thin metal layer for laser power absorption on the top of the a-Si film to be crystallized.…”