Heat transfer estimation during laser-assisted metal-induced crystallization of amorphous silicon films

Volkovoynova, L.D.; Kozhevnikov, Ilya O.; Pavlov, Anton M.; Serdobintsev, Alexey A.; Starodubov, A. V.

doi:10.56761/efre2022.c3-p-005701

8th International Congress on Energy Fluxes and Radiation Effects 2022

DOI: 10.56761/efre2022.c3-p-005701

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Heat transfer estimation during laser-assisted metal-induced crystallization of amorphous silicon films

L.D. Volkovoynova¹,

Ilya O. Kozhevnikov²,

Anton M. Pavlov³

et al.

Abstract: The article provides a simple estimate of the transfer of thermal energy to amorphous silicon from an aluminum layer in the process of laser-metal-induced crystallization of amorphous silicon.

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2024

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Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

Shariah

2024

Silicon

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Hydrogenated amorphous silicon (a-Si:H) lms were deposited using the plasma-enhanced chemical vapor deposition (PECVD) process on Corning glass substrates. An aluminum overcoat was deposited on the lms. The specimens were irradiated with a continuous wave Ar + laser beam of varying power density and duration. The samples were then annealed at 250 o C for 15 minutes to convert the amorphous silicon into polysilicon lm. The grain size of the polycrystalline silicon lms varies by varying the laser power density and the exposure time. The polysilicon grains acquired diameters ranging from 0.4 to 1.25 µm when the laser power density was set between 74.7 W/cm 2 and 94.3 W/cm 2 . The grains with a size ranging between 1 and 2.5 µm showed plate-like and dendritic-like con gurations when laser power densities changed between 31.4 and 74.7 W/cm 2 . The XRD analysis revealed polycrystalline silicon with expected relative strengths.

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Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

Shariah

2024

Silicon

View full text Add to dashboard Cite

show abstract

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Heat transfer estimation during laser-assisted metal-induced crystallization of amorphous silicon films

Abstract: The article provides a simple estimate of the transfer of thermal energy to amorphous silicon from an aluminum layer in the process of laser-metal-induced crystallization of amorphous silicon.

Cited by 1 publication

References 6 publications

Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

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