Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon

Abstract

In this work, we show for the first time that VLSIlike gate-first self-aligned InGaAs MOSFETs on insulator on Si featuring raised source/drain (S/D) can be fabricated at 300 nm pitch with gate lengths down to 24 nm. This is made possible thanks to the excellent thermal stability of ultra-thin-body and BOX InGaAs on insulator which can be used as a crystalline seed for III-V regrowth. The devices exhibit an excellent electrostatic integrity down to L G = 34 nm, comparable to the best reported tri-gate devices. We compare experimental device data to electrostatic simulations for bulk/on-insulator/tri-gate structures and extrapolate their ultimate scalability to very short L G .

Thermal stability of ultra-thin InGaAs-on-insulator substrates

“…Above 250°C, Eb of Al2O3-Si pairs reaches almost 1 J/m 2 , whereas the values for SiO2-Si pairs remain below the estimated 'processable' threshold of 0.75 J/m 2 , in agreement with published data of SOITEC [3]. This confirms also our results for InGaAs-o-I where only bonding with Al2O3 worked, allowing us to successfully process MOSFET devices with such substrates [1,4]. By this token we have demonstrated that these InGaAs-o-I structures have excellent thermal stability to withstand the required device fabrication steps.…”

Tri-gate In<inf>0.53</inf>Ga<inf>0.47</inf>As-on-insulator junctionless field effect transistors

“…For es a high channel th (L g ), while for (W fin ) and a small d. f a high-mobility In 0.53 Ga 0.47 As-on-The impact of W fin vice performance vice cross section 1 (a), (b) and (c), ated on a nstructure obtained in [3]. The nped to 10 18 /cm 3 Fig. 2(a), it is clear that the gate control over the channel increases with the scaling of W fin, as the subthreshold swing (SS) reduces from 323 mV/dec at W fin = 200 nm to 108 mV/dec at W fin = 50 nm.…”

“…1 has attracted lified fabrication ance [1], [2]. For es a high channel th (L g ), while for (W fin ) and a small d. f a high-mobility In 0.53 Ga 0.47 As-on-The impact of W fin vice performance vice cross section 1 (a), (b) and (c), ated on a nstructure obtained in [3]. The nped to 10 18 /cm 3 Fig.…”

Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS)

“…Substrate fabrication follows the method described in [16]. The III-V heterostructure is first grown by MBE on a semiinsulating InP donor wafer.…”