Room-temperature terahertz detection based on CVD graphene transistor

Yang, Xinxin; Sun, Jiandong; Qin, Hua; Lv, Li; Su, Lina; Li, Xinxing; Zhang, Zhipeng; Fang, Jinghua

doi:10.1088/1674-1056/24/4/047206

Cited by 9 publications

(5 citation statements)

References 21 publications

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“…[17] The effect of such antenna-coupled field-effect transistor can be well described by the self-mixing model and has been reported in depth in our previous publications. [16][17][18][19] According to the self-mixing model, the photocurrent (i T ) is proportional to the product of the field-effect factor dn/dV G and the onchip-antenna factor Λ , which can be expressed as…”

Section: Resultsmentioning

confidence: 99%

Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna

Sun

Zhang

et al. 2018

Chinese Phys. B

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Efficient coupling of terahertz electromagnetic wave with the active region in a terahertz detector is required to enhance the optical sensitivity. In this work, we demonstrate direct integration of a field-effect-transistor (FET) terahertz detector chip at the waveguide port of a horn antenna. Although the integration without a proper backshot is rather preliminary, the noise-equivalent power is greatly reduced from 2.7 nW/Hz 1/2 for the bare detector chip to 76 pW/Hz 1/2 at 340 GHz. The enhancement factor of about 30 is confirmed by simulations revealing the effective increase in the energy flux density seen by the detector. The simulation further confirms the frequency response of the horn antenna and the onchip antennas. A design with the detector chip fully embedded within a waveguide cavity could be made to further enhance the coupling efficiency.

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Section: Resultsmentioning

confidence: 99%

Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna

Sun

Zhang

et al. 2018

Chinese Phys. B

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“…Its main benefits include its ability to penetrate most dielectrics without being invasive or ionizing, its capability to probe molecular dynamics [223] and the sheer data throughput for communications. Graphene has been used in these detection technologies in many ways e.g., as a ballistic rectifier [224], or on antennas on flexible substrates [225], or using more conventional GFETs [226][227][228]. Graphene has also been used in THz modulation [227,229].…”

Section: Applicationsmentioning

confidence: 99%

Review of fabrication methods of large-area transparent graphene electrodes for industry

Mustonen

Mackenzie

Lipsanen

2020

Front. Optoelectron.

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Graphene is a two-dimensional material showing excellent properties for utilization in transparent electrodes; it has low sheet resistance, high optical transmission and is flexible. Whereas the most common transparent electrode material, tin-doped indium-oxide (ITO) is brittle, less transparent and expensive, which limit its compatibility in flexible electronics as well as in low-cost devices. Here we review two large-area fabrication methods for graphene based transparent electrodes for industry: liquid exfoliation and low-pressure chemical vapor deposition (CVD). We discuss the basic methodologies behind the technologies with an emphasis on optical and electrical properties of recent results. State-of-the-art methods for liquid exfoliation have as a figure of merit an electrical and optical conductivity ratio of 43:5, slightly over the minimum required for industry of 35, while CVD reaches as high as 419.

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“…This model shows the intrinsic GFET (inside For the voltage output, the detector can be modeled as a current source with an intrinsic source-drain resistance (r ds ). Thus, the rectified voltage measured between the drain and the source terminals can be expressed as [32] v…”

Section: Electrical Nonlinear Modelmentioning

confidence: 99%

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

Yang

Vorobiev

Jeppson

et al. 2020

IEEE Trans. THz Sci. Technol.

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Direct power detectors based on field-effect transistors are becoming widely used for terahertz applications. However, accurate characterization at terahertz frequencies of such detectors is a challenging task. The high-frequency response is dominated by parasitic coupling and loss associated with contacts and overall layout of the component. Moreover, the performance of such detectors is complicated to predict since many different physical models are used to explain the high sensitivity at terahertz frequencies. This makes it hard to draw important conclusions about the underlying device physics for these detectors. For the first time, we demonstrate accurate and comprehensive characterization of graphene fieldeffect transistors from 1 GHz to 1.1 THz, simultaneously accessing the bias dependence, the scattering parameters, and the detector voltage responsivity. Within a frequency range of more than 1 THz, and over a wide bias range, we have shown that the voltage responsivity can be accurately described using a combination of a small-signal equivalent circuit model, and the second-order series expansion terms of the nonlinear dc I-V characteristics. Without bias, the measured low-frequency responsivity was 0.3 kV/W with the input signal applied to the gate, and 2 kV/W with the input signal applied to the drain. The corresponding cutoff frequencies for the two cases were 140 and 50 GHz, respectively. With a 300-GHz signal applied to the gate, a voltage responsivity of 1.8 kV/W was achieved at a drain-source current of 0.2 mA. The minimum noise equivalent power was below 30 pW/ √ Hz in cold mode. Our results show that detection of terahertz signals in graphene field-effect transistors can be described over a wide frequency range by the nonlinear carrier transport characteristics obtained at static electrical fields. This finding is important for explaining the mechanism of detection and for further development of terahertz detectors.

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Room-temperature terahertz detection based on CVD graphene transistor

Cited by 9 publications

References 21 publications

Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna

Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna

Review of fabrication methods of large-area transparent graphene electrodes for industry

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

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