Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna

Li, Xiang; Sun, Jiandong; Zhang, Zhipeng; Popov, V. V.; Qin, Hua

doi:10.1088/1674-1056/27/6/068506

Cited by 5 publications

(6 citation statements)

References 17 publications

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“…The quasi-two-dimensional (2D) Ga 2 O 3 -based back-gate field-effect transistor (FET) was also used as solar-blind photodetector. [64,81,82] The 2D Ga 2 O 3 flake using mechanical exfoliation was transferred to SiO 2 /Si substrate and deposited Cr/Au as source and drain pads. The p-type Si substrate was used as back gate.…”

Section: Algan-based Solar Blind Photodetectorsmentioning

confidence: 99%

Recent advances in Ga-based solar-blind photodetectors

Han

et al. 2019

Chinese Phys. B

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Solar-blind ultraviolet photodetectors have many advantages, such as low false alarm rates, the ability to detect weak signals, and high signal-to-noise ratios. Among the various functional solar-blind ultraviolet photodetectors, Ga-based alloys of AlGaN and Ga 2 O 3 are the most commonly adopted channel semiconductor materials and have attracted extensive research attention in the past decades. This review presents an overview of the recent progress in Ga-based solar-blind photodetectors. In case of AlGaN-based solar-blind ultraviolet photodetectors, the response properties can be improved by optimizing the AlN nucleation layer and designing the avalanche structure. On the other hand, we also discuss the morphology and growth methods of Ga 2 O 3 nanomaterials and their effect on the performance of the corresponding solarblind photodetectors. The mechanically exfoliated Ga 2 O 3 flakes show good potential for ultraviolet detection. Also, Ga 2 O 3 nanoflowers and nanowires reveal perfect response to ultraviolet light. Finally, the challenges and future development of Ga-based functional solar-blind ultraviolet photodetectors are summarized.

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Section: Algan-based Solar Blind Photodetectorsmentioning

confidence: 99%

Recent advances in Ga-based solar-blind photodetectors

Han

et al. 2019

Chinese Phys. B

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“…C G ≈ 0.40 µF/cm 2 is the gate-channel capacitance per unit area, µ is the electron mobility, and V TH stands for the threshold gate voltage to deplete the channel. According to the detector model, [14][15][16] the external photocurrent generated with zero source-drain bias can be described as i T = Λ • Ξ • P THz , where antenna factor Λ counts for the conversion factor contributed by the antenna which couples the incident terahertz wave into the gated electron channel, field-effect factor Ξ = (1 − 2r 1 G) × dG/dV G counts for the conversion factor contributed by the field-effect gate which mixes the terahertz fields and generates a DC photocurrent, and P THz is the total terahertz power received by the detector. The responsivity (R i ) of the detector can be obtained according to R i = i T /P THz .…”

Section: Device Model and Experiments Setupmentioning

confidence: 99%

Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures*

Tian

Yao

et al. 2019

Chinese Phys. B

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The responsivity and the noise of a detector determine the sensitivity. Thermal energy usually affects both the responsivity and the noise spectral density. In this work, the noise characteristics and responsivity of an antenna-coupled AlGaN/GaN high-electron-mobility-transistor (HEMT) terahertz detector are evaluated at temperatures elevated from 300 K to 473 K. Noise spectrum measurement and a simultaneous measurement of the source–drain conductance and the terahertz photocurrent allow for detailed analysis of the electrical characteristics, the photoresponse, and the noise behavior. The responsivity is reduced from 59 mA/W to 11 mA/W by increasing the detector temperature from 300 K to 473 K. However, the noise spectral density maintains rather constantly around 1–2 pA/Hz1/2 at temperatures below 448 K, above which the noise spectrum abruptly shifts from Johnson-noise type into flicker-noise type and the noise density is increased up to one order of magnitude. The noise-equivalent power (NEP) is increased from 22 pW/Hz1/2 at 300 K to 60 pW/Hz1/2 at 448 K mainly due to the reduction in mobility. Above 448 K, the NEP is increased up to 1000 pW/Hz1/2 due to the strongly enhanced noise. The sensitivity can be recovered by cooling the detector back to room temperature.

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“…However, their common disadvantages are the long response time and poor resistance to the thermal source in the environment. Since Dyakonov and Shur [ 1 , 2 ] proposed the plasma oscillation theory in field-effect transistors (FETs), THz detectors of FET types like metal oxide semiconductor (MOS) FETs [ 3 , 4 , 5 , 6 ], III–V high electron mobility transistor (HEMT) [ 7 , 8 , 9 , 10 , 11 , 12 ], and FETs based on two-dimensional materials [ 13 , 14 , 15 , 16 , 17 , 18 ] were intensively studied because of their fast response rate and micro-nano size. Among different types of FETs, GaN/AlGaN HEMTs received extensive attention for their excellent frequency and power characteristics, which are very suitable for operating in the THz region.…”

Section: Introductionmentioning

confidence: 99%

“…During the past decades, GaN/AlGaN HEMT THz detectors have achieved impressive development. The minimum noise equivalent power (NEP) at room temperature was able to reach the order of 10 pW/Hz 0.5 beyond 1 THz [ 7 , 8 , 9 , 10 , 11 , 12 ]. In addition, THz detectors based on HEMTs have been prepared in an array on chips and applied in real-time imaging [ 19 , 20 , 21 ].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, THz detectors based on HEMTs have been prepared in an array on chips and applied in real-time imaging [ 19 , 20 , 21 ]. However, most of the related work mainly focused on the optimization of THz antenna [ 7 , 8 , 10 ] and the structure of GaN HEMT [ 11 , 12 ]; rarely has novel epitaxial material structures of GaN HEMT THz detectors been reported. It was noticed that the epitaxial layer material property is not only related to the crystal quality but also affects the self-mixing effect of GaN/AlGaN HEMT THz detectors.…”

Section: Introductionmentioning

confidence: 99%

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A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

et al. 2021

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A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improved. The maximum responsivity of 10 kV/W and minimum noise equivalent power (NEP) of 15.5 pW/Hz0.5 are obtained at the radiation frequency of 315 GHz. The results are comparable to and even more promising than the reported single-channel (SC) GaN HEMT detectors. The enhancement of THz response and the reduction of NEP of the DC GaN HEMT detector mainly results from the interaction of 2DEG in the upper and lower channels, which improves the self-mixing effect of the detector. The promising experimental results mean that the proposed DC GaN/AlGaN HEMT THz detector is capable of the practical applications of THz detection.

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Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna

Cited by 5 publications

References 17 publications

Recent advances in Ga-based solar-blind photodetectors

Recent advances in Ga-based solar-blind photodetectors

Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures*

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

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