Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL

Lehninger, David; Mertens, Konstantin; Gerlich, Lukas; Lederer, Maximilian; Ali, Tarek; Seidel, Konrad

doi:10.1557/s43580-021-00118-w

Cited by 4 publications

(3 citation statements)

References 14 publications

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“…This deposition method is promising especially because of the high throughput rate. [ 95 ] Furthermore, HZO crystallizes at comparatively low temperatures [ 13,49,50 ] that are compatible with the thermal budget present in the BEoL.…”

Section: Memory‐based Applications Of Fluorite‐structured Materialsmentioning

confidence: 99%

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Ali

Lehninger

et al. 2022

Adv Funct Materials

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Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory-related and energy-related applications. Perovskite materials (e.g., bulk ceramics) remain the most common materials for many applications. However, due to large deposition thickness, these materials are not appropriate for future miniaturized devices. In 2011, FE and AFE properties were reported in Si-doped HfO 2 thin films. HfO 2 -based FE and AFE materials have several advantages over conventional materials, such as ultrathin deposition thickness (in range of nanometers), compatibility with existing Si semiconductor technology, and suitability for the integration within 3-D nanostructures. Therefore, fluorite-structured materials can be appropriate for miniaturized devices. These fluorite-structured materials are extensively studied for memory and energy-related applications. The first review on this topic was published after four years of discovering the FE and AFE properties in these materials. From the past decade, a lot of research has been reported about the detailed mechanism and application of these materials. This review insightfully discusses the progress in the research of fluorite-structured materials and critically discusses some potential applications. Here some challenges are also discussed, new knowledge is extracted, and promising future research directions of these materials are suggested.

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Section: Memory‐based Applications Of Fluorite‐structured Materialsmentioning

confidence: 99%

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Ali

Lehninger

et al. 2022

Adv Funct Materials

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“…This modular platform provides a diverse portfolio of voltage options and various automotive-qualified memory solutions. The FE HZO films were optimized to fulfill the BEoL requirements 6,[24][25][26] and stabilize a significant portion of the orthorhombic phase [27][28][29][30] before wafers could undergo looping with X-FAB.…”

Section: Experimental Methodsmentioning

confidence: 99%

Integration of ferroelectric devices for advanced in-memory computing concepts

Seidel,

Lehninger,

Sünbül

et al. 2024

Jpn. J. Appl. Phys.

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In this work the integration of ferroelectric (FE) devices for advanced in-memory computing applications is demonstrated based on the FeMFET memory cell concept. In contrast to FeFET having the FE layer directly embedded in the gate-stack, the FeMFET consists of a separated ferroelectric capacitor which can be integrated in the chip-interconnect layers.Optimization of the FE material stack under such lower thermal budget constraints will be discussed as well as the significant performance improvement and reduction of variability by application of superlattice FE-stacks and further optimization knobs. The low memory state variability is important for accurate multiply-accumulate (MAC) operation. Such improvements are demonstrated on a memory array test chip including functional verification of MAC operation along a FeMFET-based array column with good accuracy over high dynamic current range. 

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“…Before wafers could be looped with X-FAB, the FE HZO films were optimized to meet the BEoL requirements [13], [14], [17], [18] and to stabilize a large fraction of the orthorhombic phase [19], [20], [21]. However, since these preoptimizations were done using a Fraunhofer IPMS internal platform, not all of these results can be transferred one-to-one to the loop wafers investigated here.…”

Section: Methodsmentioning

confidence: 99%

Ferroelectric FETs With Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio

Lehninger

Hoffmann

Sünbül

et al. 2022

IEEE Electron Device Lett.

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Hafnium oxide based ferroelectric (FE) memory concepts like FE field effect transistors (FeFETs) will become increasingly important. They are highly scalable, provide high operation speed, and consume low power. Just recently, an 1T1C FeFET concept with one transistor (1T) and one separated FE capacitor (1C) was demonstrated. This alternative approach is promising to overcome the drawbacks usually observed for the classic 1T concept like limited endurance, reduced retention, and high device-todevice variability. Electrically, the 1T1C FeFET consists of a series connection of the FE capacitor and the gate oxide capacitance. To operate at low voltages, a large fraction of the applied voltage must drop across the FE, which can be achieved by optimizing the capacitance ratio. Herein, 1T1C FeFETs with various capacitance ratios are fabricated and its impact on the electrical performance is discussed. Furthermore, the observed endurance of up to 10 8 field cycles illustrates the great potential of the new concept.

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Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL

Cited by 4 publications

References 14 publications

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Integration of ferroelectric devices for advanced in-memory computing concepts

Ferroelectric FETs With Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio

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