Room-temperature photoluminescence from Tb ions implanted in SiO2 on Si

Amekura, H.; Eckau, A.; Carius, R.; Buchal, Ch.

doi:10.1063/1.368591

Cited by 91 publications

(53 citation statements)

References 21 publications

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“…13͒ and SiO 2 :Tb 3+ . 14,15 However, electroluminescence from rare-earth-doped MOS structures has not been studied much due to the limited current injection into the dielectric SiO 2 layer and the poor reliability at high electric field ͑charge to breakdown͒. One solution for this problem is the introduction of excess silicon into SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices

Sun

Skorupa

Dekorsy

et al. 2005

Journal of Applied Physics

108

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Bright green electroluminescence with luminance up to 2800 cd/ m 2 is reported from indium-tin-oxide/SiO 2 : Tb/ Si metal-oxide-semiconductor devices. The SiO 2 :Tb 3+ gate oxide was prepared by thermal oxidation followed by Tb + implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb 3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1 lm/ W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb 3+ luminescent centers by hot electrons and the subsequent crossrelaxation from 5 D 3 to 5 D 4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.

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Section: Introductionmentioning

confidence: 99%

Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices

Sun

Skorupa

Dekorsy

et al. 2005

Journal of Applied Physics

108

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“…The green photoluminescence of Tb 3þ in SRSO and SiO 2 thin films has been studied by several groups [23,30,31]. Slightly different trends in behavior from that seen for Ce-doped samples have been observed for a set of ECR-PECVD-grown Tb-doped SRSO and ORSO samples, as is shown in Figure 17.8.…”

Section: Luminescence Of Rare Earth-doped Silicon-based Materialsmentioning

confidence: 87%

Lighting Applications of Rare Earth‐Doped Silicon Oxides

Roschuk

Wójcik

et al. 2010

Silicon Nanocrystals

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Silicon nanoclusters (Si-ncs) are of substantial interest as they play a significant role in the development of Si-based light sources [1,2]. One of the main application areas is in integrated photonics for telecommunications and computing; however, there is also a substantial market for the use of these materials in lighting and displays. Lighting accounts for approximately 20% of the $60 billion electricity market in the United States [3]. The potential to tap this market, combined with the inefficiency of incandescent bulbs, has driven research over the past decades in the area of solidstate lighting (SSL). The market for both incandescent and fluorescent light sources has been steadily dwindling with a shift toward the development of more efficient, cheaper, and environment friendly alternatives, such as SSL [4,5]. In 2007, the market for LED lighting was estimated at $330 million (a 60% increase over the previous year) and is projected to grow to $1.4 billion by 2012 [6].As with light sources for integrated photonics, the SSL market relies primarily on III-V, II-VI, or phosphor-based materials and, more recently, organic light emitting diodes (OLEDs) [5]. With the ability to attain efficient luminescence in Si-nc-based systems, however, the possibility of an all-Si approach has become attractive. Such an approach would allow manufacturers to use of the same large-scale production and processing facilities as used by the microelectronics and solar cell industries while maintaining low cost. There are two performance metrics generally of interest for solid-state lighting, the performance (in lumens) per dollar and the performance per watt (efficacy). Figure 17.1 illustrates these metrics for several common lighting sources. While LED and OLED technologies currently lead in terms of efficacy, recently explored RE-doped silicon-based materials (shown on the graph as Rare Earth Films) have a clear advantage in terms of the performance per dollar (data courtesy of Group IV Semiconductor Inc.). Furthermore, integration with the necessary electronics for driving Si-based lighting cells or pixels would then be easily achieved due to the use of a Si-platform. In particular, the use of rare earth dopants to attain specific colored emissions for mixing to obtain white light presents a viable pathway to Si-based lighting. Such an approach borrows from that commonly used with color-converting phosphors, where rare earths are routinely used, while incorporating the rare earth elements into a silicon-based host for the advantages in fabrication.

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“…This emission is usually attributed to zinc and/or oxygen vacancies and interstices in ZnO matrix [31]. In order to know whether these emissions [390 nm-650 nm] are originating from ZnO host defects or the 5 D 3 → 7 F i Tb transitions [30,32,33], we compared a Tb:ZnO film annealed at 600°C to a very thick (4 μm) undoped ZnO film (Fig. 6b).…”

Section: Resultsmentioning

confidence: 99%

Annealing effects on the photoluminescence of terbium doped zinc oxide films

et al. 2014

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effects on the photoluminescence of terbium doped zinc oxide films. Thin Solid Films, Elsevier, 2014Elsevier, , 553, pp.52-57. 10.1016Elsevier, /j.tsf.2013 Annealing effects on the photoluminescence of terbium doped zinc oxide films Terbium doped zinc oxide (Tb:ZnO) films were deposited by radio frequency magnetron sputtering on (100) single-crystalline silicon substrates at low temperature (T S = 100°C). In this work, structural changes, optical properties and the associated photoluminescence (PL) responses are analyzed upon the annealing treatments. Post-annealing treatments from annealing temperature T a = 400°C up to 1000°C by steps of 100°C were performed. Chemical analyses by energy dispersive X-ray spectrometry measurements showed a constant dopant concentration of 3 at.%. Up to 600°C, the band gaps (E g ) decreased with T a from 3.44 down to 3.37 eV. Above 600°C, the band gap raised from 3.37 up to 3.42 eV (for 900°C). Depending on T a , a bi-axial stress was found varying from a compressive value of −0.21 GPa (400°C) down to a tensile value of 0.05 GPa (1000°C). PL mechanisms of the Tb:ZnO film are then discussed.

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Room-temperature photoluminescence from Tb ions implanted in SiO2 on Si

Cited by 91 publications

References 21 publications

Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices

Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices

Lighting Applications of Rare Earth‐Doped Silicon Oxides

Annealing effects on the photoluminescence of terbium doped zinc oxide films

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