No abstract

Bright green electroluminescence with luminance up to 2800 cd/ m 2 is reported from indium-tin-oxide/SiO 2 : Tb/ Si metal-oxide-semiconductor devices. The SiO 2 :Tb 3+ gate oxide was prepared by thermal oxidation followed by Tb + implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb 3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1 lm/ W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb 3+ luminescent centers by hot electrons and the subsequent crossrelaxation from 5 D 3 to 5 D 4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.

Recovering multi-person 3D poses with absolute scales from a single RGB image is a challenging problem due to the inherent depth and scale ambiguity from a single view. Addressing this ambiguity requires to aggregate various cues over the entire image, such as body sizes, scene layouts, and inter-person relationships. However, most previous methods adopt a top-down scheme that first performs 2D pose detection and then regresses the 3D pose and scale for each detected person individually, ignoring global contextual cues. In this paper, we propose a novel system that first regresses a set of 2.5D representations of body parts and then reconstructs the 3D absolute poses based on these 2.5D representations with a depth-aware part association algorithm. Such a single-shot bottom-up scheme allows the system to better learn and reason about the inter-person depth relationship, improving both 3D and 2D pose estimation. The experiments demonstrate that the proposed approach achieves the state-of-the-art performance on the CMU Panoptic and MuPoTS-3D datasets and is applicable to in-the-wild videos.

TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti3+ ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti3+ ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.