Annealing effects on the photoluminescence of terbium doped zinc oxide films

Abstract

effects on the photoluminescence of terbium doped zinc oxide films. Thin Solid Films, Elsevier, 2014Elsevier, , 553, pp.52-57. 10.1016Elsevier, /j.tsf.2013 Annealing effects on the photoluminescence of terbium doped zinc oxide films Terbium doped zinc oxide (Tb:ZnO) films were deposited by radio frequency magnetron sputtering on (100) single-crystalline silicon substrates at low temperature (T S = 100°C). In this work, structural changes, optical properties and the associated photoluminescence (PL) responses are analyzed upon the annealing treatments. Post-annealing treatments from annealing temperature T a = 400°C up to 1000°C by steps of 100°C were performed. Chemical analyses by energy dispersive X-ray spectrometry measurements showed a constant dopant concentration of 3 at.%. Up to 600°C, the band gaps (E g ) decreased with T a from 3.44 down to 3.37 eV. Above 600°C, the band gap raised from 3.37 up to 3.42 eV (for 900°C). Depending on T a , a bi-axial stress was found varying from a compressive value of −0.21 GPa (400°C) down to a tensile value of 0.05 GPa (1000°C). PL mechanisms of the Tb:ZnO film are then discussed.

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

“…43,70,71 The doping density obtained in the analyzed samples is around 3% as measured by energy-dispersive X-ray spectrometry. 43 (We remark that the high concentration of dopant would also make it possible to consider the material as an alloy between zinc oxide and terbium oxide. However, different stoichiometric ratios are possible for Tb x O y , and it is common practice to define the studied material as Tb-doped ZnO, briefly denoted as ZnO:Tb.)…”

Lanthanide (Eu, Tb, La)-Doped ZnO Nanoparticles Synthesized Using Whey as an Eco-Friendly Chelating Agent

“…The emission spectrum was obtained using the excitation wavelength of 488.0 nm of the 5 D 4 ← 7 F 5 transition (Figure 10a). Here, five emission bands are observed at 544.0, 584.7, 622.1, 649.9, and 684.2 nm, corresponding to the transition from the excited level 5 D 4 to 7 F 5 , 7 F 4 , 7 F 3 , 7 F 2 , and 7 F 1 , respectively [68,69].…”

Structure, microstructure, optical and photocatalytic properties of Mn-doped ZnO nanoparticles

“…Since a F R ( ) is proportional to α and ZnO has direct allowed transitions, n is taken as 1/2. Thus, equation (11) can be transformed to: These changes in the values of E g depend on several factors such as grain size, carrier concentration, lattice strain, the size effect of the dopant metals in ZnO lattice [45]. Koao et al [46] showed that the grain size and the luminescence intensity increased when an increase in the amount of Mn 3+ ions occurred.…”