Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

Room-temperature ferromagnetism of (Ga,Mn)N films: effects of Ga flux and growth temperature

“…Because Mn effusion cell temperature was fixed, Mn concentration in the films decreases as Ga effusion cell temperature increases. As reported previously [11,12], the lattice parameter expands as Mn substitutes for Ga in GaN film. Therefore, as Mn concentration increases in the films, the (Ga,Mn)N (0 0 0 2) peak position shifted to low angle side.…”

Preparation GaxMn1−xN DMS materials using HVPE method

“…2. [17] found that the Ga x Mn 1Àx N lattice parameter was lager than that of a MOCVDgrown GaN, Cui et al [11] also showed through a XRD spectra that Ga x Mn 1Àx N lattice parameter was larger than that of a MBE-grown GaN.…”

“…Park et al [17] reported Ga x Mn 1Àx N films, with low Mn concentration from 0.06% to 0.5% grown by plasmaenhanced MBE, exhibited n-type conductivity and ferromagnetism with Curie temperature in the range of 550-700 K. Sonoda et al [12] reported a much higher Curie temperature of 940 K for Mn-doped GaN using NH 3 -source MBE.…”

Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

“…Recent interest has focused on GaN as a base for DMSs due to its wide band gap, robust nature, and well-established manufacturing base for lightemitting diodes and laser diodes. Transition metal dopants in GaN have been extensively studied, [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] but the rare earth elements have lately gained momentum as a dopant for dilute magnetic semiconductor applications. [21][22][23] There is potential for incorporating this type of material into applications such as spin valves, magnetic tunnel junctions, and spin LEDs.…”