Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

Hite, Jennifer K.; Frazier, R. M.; Davies, Ryan; Thaler, G. T.; Abernathy, C. R.; Pearton, S. J.; Zavada, J. M.; Brown, E.; Hömmerich, U.

doi:10.1007/s11664-006-0040-1

Cited by 27 publications

(13 citation statements)

References 29 publications

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“…[8][9][10][12][13][14] Only few exceptions show partly ferromagnetic samples or no ferromagnetism. 15,16 The origin of the ferromagnetic order in GaN:Gd is still unknown. It was shown that cation vacancies can provide local moments which exchange directly by their overlapping wave functions and provide a long-ranged coupling mechanism.…”

mentioning

confidence: 99%

Tracking defect-induced ferromagnetism in GaN:Gd

et al. 2011

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We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 10 19 cm −3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen codoping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN.

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confidence: 99%

Tracking defect-induced ferromagnetism in GaN:Gd

et al. 2011

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“…The substrate and the kind of MBE seem to be of minor importance. For 6 H ‐SiC , sapphire , and LiAlO 2 as substrates and plasma‐assisted as well as reactive MBE hysteretic magnetization behavior at room temperature has been observed. Ferromagnetic behavior was reported for Gd concentrations in the few percent range as well as for the lower doping level concentration range down to 10 16 cm −3 .…”

Section: Growth Methods Influence On the Magnetic Properties Gd‐doped Ganmentioning

confidence: 88%

“…Teraguchi et al reported room temperature ferromagnetism in molecular beam epitaxy (MBE) grown Ga 0.94 Gd 0.06 N in 2002. Later, ferromagnetism in GaN:Gd was demonstrated by several groups . Ferromagnetism was observed for samples where the Gd was incorporated during MBE growth as well as in samples where the Gd was implanted .…”

Section: Introductionmentioning

confidence: 95%

Magnetic properties of Gd‐doped GaN

Shvarkov

Ludwig

Wieck

et al. 2014

Physica Status Solidi (b)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.In this paper, we discuss the magnetic properties of Gd-doped GaN. This diluted magnetic semiconductor shows hysteretic magnetization behavior at room temperature, which is attributed to ferromagnetism with a Curie temperature well above 300 K. However, the experimental results regarding the magnetic properties are not completely consistent and the microscopic origin for the reported magnetic properties is still unclear. We discuss the role of the growth method of the GaN comparing molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) including GaN doped during the growth process with Gd as well as Gd-implanted material. It seems that in general it is easier to obtain hysteretic magnetization behavior for MBE-grown material probably due to the higher oxygen and lower hydrogen content. An exception is Gd-implanted GaN MBE-grown on Si(111) where we observe no ferromagnetism. We will present experiments where by oxygen implantation and annealing the impurity concentration was manipulated. The role of native defects is addressed and new experiments where additional defects have been introduced by nitrogen implantation in MBE-grown GaN:Gd are discussed. We present our results on anomalous Hall effect observed in a Gd-implanted GaN/AlGaN heterostructure.

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“…Pearton et al reported the room temperature FM for the Gd-implaned GaN [16]. They also observed the increase of magnetization with the increase of co-doped Si concentration [17]. On the other hand, Dhar et al reported the colossal magnetic moment in the low Gd concentration (10 16 -10 18 cm -3 ) of GaGdN grown by MBE and explained within the framework of the phenomenological model [18].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

et al. 2011

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Transition metal (Cr) and rare-earth (Dd, Dy) doped III-nitride semiconductor bulk layers and superlattice (SL) structures are grown on sapphire (0001) substrates and GaN (0001) templates by plasma-assisted molecular-beam epitaxy. For the GaGdN/GaN and InGaGdN/GaN SL and Si co-doped samples, enhancement of magnetization and magnetic moment are observed, suggesting the carrier-mediated ferromagnetism. Low temperature growth of GaGdN can increase the Gd concentration and magnetization. Results for the Dy-doped GaN as well as the GaCrN/AlN/GaCrN tunnel magneto-resistance (TMR) diodes are also described.

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Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

Cited by 27 publications

References 29 publications

Tracking defect-induced ferromagnetism in GaN:Gd

Tracking defect-induced ferromagnetism in GaN:Gd

Magnetic properties of Gd‐doped GaN

Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

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