Room temperature fabrication of p-channel Cu₂O thin-film transistors on flexible polyethylene terephthalate substrates

p-channel thin-film transistors based on spray-coated Cu2O films

“…SnO x has received significant attention in recent years mainly because of the high hole field-effect mobility (l h,FE ) on the order of 0. . 16 Collectively, these results reaffirm that the desired field-effect mobility of >1 cm 2 V À1 s À1 is generally achievable with Cu 2 O transistors.…”

Metal oxide semiconductor thin-film transistors for flexible electronics

“…Also in this case, the substrates need to fulfill several requirements, such as compatibility with the fabrication process (high T G and T m , reduced outgassing, and chemical stability) and good mechanical properties, sometimes even combined with specific features like high transparency. Most common substrate materials are PI, 257,273 PET, 289 and PES. 285 Furthermore, also cellulose fiber-based paper (thickness of %75 lm) acting as both substrate and gate dielectric has been used (Fig.…”

“…75,298,299 Moreover, doping of n-type metal oxide semiconductors has enabled the demonstration of p-type TFTs based on P-and N-doped ZnO NW, 259,300 as well Ga 2 O 3 :Zn. 70 Among all the reported p-type metal oxide semiconductor TFTs, [70][71][72][73][74][75]79,[280][281][282][283][284][285][286][287][288][289][290][291][292][293][294]300 only few devices have been fabricated on flexible substrates. 36,79,257,267,272,273,285,289 This is mainly due to the high deposition and annealing temperatures (typically !200 C) that are required, which are incompatible with flexible temperature-sensitive substrates.…”

“…The most common substrate preparation approach is the use of free-standing flexible substrates. 79,257,267,272,273,285,289 b. Deposition methods. The main deposition technique employed for p-type vacuum-processed metal oxide semiconductors is sputtering.…”

Thin-film metal oxides in organic semiconductor devices: their electronic structures, work functions and interfaces

“…The first reported use of oxide buffer layers in OLEDs was by Tokito et al 61 in 1996. Now, transition metal oxides are heavily utilized in OLEDs, 60 OPVs, [92][93][94][95][96][97] and OFETs, [98][99][100][101][102][103][104] and are components in many of the current record-breaking devices reported in the literature. 2,105 Transition metal oxides can possess a wide range of work functions, spanning from extreme low of 3.5 eV for defective ZrO 2 to the extreme high of 7.0 eV for stoichiometric V 2 O 5 .…”