Transition metal dichalcogenides (TMDs) (MX 2 , M = Mo or W, X = S, Se, or Te) have attracted intense interest for developing ultrascaled electronics and optoelectronics by virtue of their attractive 2D layered structures and unique physical properties that are absent in their bulk counterparts. [1][2][3][4][5] Monolayer semiconducting TMDs show sizable direct bandgaps, quantum confinement effects, large exciton binding energies and effective valley polarizations, which unveils widespread applications in field-effect transistors (FETs), photodetectors, light-emitting diodes, pumped lasers, solar cells, and valleytronic devices. [6][7][8][9][10] More excitingly, their 2D structures offer superior electrostatic controllability and exemptible short-channel effects, rendering TMDs promising candidates for future sub-10 nm complimentary metal-oxide-semiconductor (CMOS) devices. [5,11,12] The applications of exfoliated TMD flakes in building high-performance prototypes of electronics, photonics, and optoelectronics have already been demonstrated. [13][14][15][16] The exfoliated flakes, however, suffer from Monolayer MoTe 2 , with the narrowest direct bandgap of ≈1.1 eV among Mo-and W-based transition metal dichalcogenides, has attracted increasing attention as a promising candidate for applications in novel near-infrared electronics and optoelectronics. Realizing 2D lateral growth is an essential prerequisite for uniform thickness and property control over the large scale, while it is not successful yet. Here, layer-by-layer growth of 2 in. wafer-scale continuous monolayer 2H-MoTe 2 films on inert SiO 2 dielectrics by molecular beam epitaxy is reported. A single-step Mo-flux controlled nucleation and growth process is developed to suppress island growth. Atomically flat 2H-MoTe 2 with 100% monolayer coverage is successfully grown on inert 2 in. SiO 2 /Si wafer, which exhibits highly uniform in-plane structural continuity and excellent phonon-limited carrier transport behavior. The dynamics-controlled growth recipe is also extended to fabricate continuous monolayer 2H-MoTe 2 on atomic-layer-deposited Al 2 O 3 dielectric. With the breakthrough in growth of wafer-scale continuous 2H-MoTe 2 monolayers on device compatible dielectrics, batch fabrication of high-mobility monolayer 2H-MoTe 2 field-effect transistors and the three-level integration of vertically stacked monolayer 2H-MoTe 2 transistor arrays for 3D circuitry are successfully demonstrated. This work provides novel insights into the scalable synthesis of monolayer 2H-MoTe 2 films on universal substrates and paves the way for the ultimate miniaturization of electronics.
