Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells

Hall, K. C.; Gündoğdu, Kenan; Hicks, Jim L.; Kocbay, A. N.; Flatté, Michael E.; Boggess, Thomas F.; Holabird, K.S.; Hunter, A. T.; Chow, D. H.; Zinck, J. J.

doi:10.1063/1.1929082

Cited by 35 publications

(18 citation statements)

References 19 publications

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“…Furthermore, symmetric QDs with ideal electronic characteristics for entangled photon emitters have been demonstrated using the InAlAs/InP(111)A buffers achieved in our experiments. 10,21 GaAs(110) quantum wells have been used to make encouraging spintronic devices, [33][34][35][36] and the developments we report here may soon help enable InP(110)-based spintronics. Smooth buffer layers on InP (111) surfaces are anticipated to provide ideal templates for the growth of topological insulators and transition metal dichalcogenides.…”

Section: Discussionmentioning

confidence: 85%

“…31,32 This property has enabled a number of advances in spintronics to be made using (110) quantum wells, including gate-control of relaxation time, 33 low-voltage spin manipulation, 34 spin-injected light emitting diodes, 35 and spin-injected lasers. 36 For spintronic applications, smooth interfaces are essential for maximizing spinlifetimes, 33,37 but III-V materials grown on (110) surfaces are often rough.…”

Section: Spintronicsmentioning

confidence: 99%

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Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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Section: Discussionmentioning

confidence: 85%

Section: Spintronicsmentioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Other investigations include the achievement of high temperature gate control of spin lifetime [193,671,672], which can be useful in spin switch devices or spin field-effect transistors. The typical results of spin lifetime as a function of the electric field E along the growth direction are shown in Fig.…”

Section: Quantum Wells: Experiments and Theoriesmentioning

confidence: 99%

Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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“…Gate manipulation of spin dynamics has been widely investigated because the ability to control the electron spin state by utilizing the Rashba effect through a gate structure might have practical device applications. [10][11][12] The effect of the Rashba term on the electron spin relaxation in ͑110͒ GaAs/AlGaAs QWs is expected to be more pronounced than in ͑100͒ QWs, as a result of the suppression of the BIA term. So far, however, Karimov et al 13,14 has investigated such effects at low temperature; their device was destroyed by excessive currents at higher temperatures.…”

mentioning

confidence: 99%

Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells

Iba

Koh

Kawaguchi

2010

Applied Physics Letters

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A (110)-oriented p-i-n structure with GaAs/AlGaAs quantum wells (QWs) was fabricated, and the effect of an applied electric field on the electron spin relaxation time was investigated by utilizing polarization- and time-resolved photoluminescence measurements. We demonstrated a tenfold modulation of the electron spin relaxation time from 4.0 to 0.3 ns in the QWs through the Rashba spin-orbit coupling induced by applying an external electric field at room temperature.

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Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells

Cited by 35 publications

References 19 publications

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Spin dynamics in semiconductors

Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells

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