Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells

Iba, Satoshi; Koh, Shinji; Kawaguchi, Hitoshi

doi:10.1063/1.3514675

Cited by 11 publications

(9 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Quantum well structures prepared on (110)’oriented GaAs substrates are of particular interest because in QWs of this orientation and special design extraordinarily slow spin dephasing can be achieved. Spin lifetimes up to several nanoseconds or even submicroseconds () have been reported in GaAs and other III–V semiconductor‐based heterostructures, for review see, e.g., (). As discussed in Section , in structures of this orientation the effective magnetic field induced by the BIA points along the growth axis and does not lead to the Dyakonov–Perel relaxation of spins oriented along this direction.…”

Section: Interplay Of Bia and Sia In (001)‐ (110)‐ And (111)’grown mentioning

confidence: 99%

Interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy –A review

Ganichev

Golub²

2014

Physica Status Solidi (b)

204

205

View full text Add to dashboard Cite

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two-dimensional systems made of zincblende III-V, wurtzite, and SiGe semiconductors. We discuss the symmetry aspects of the linear and cubic in electron wavevector spin splitting in heterostructures prepared on (001)-, (110)-, (111)-, (113)-, (112)-, and (013)-oriented substrates and address the requirements for suppression of spin relaxation and realization of the persistent spin helix state. In experimental part of the paper, we overview experimental results on the interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy: The method based on the phenomenological equivalence of the linear-in-wavevector spin splitting and several photogalvanic phenomena.

show abstract

Section: Interplay Of Bia and Sia In (001)‐ (110)‐ And (111)’grown mentioning

confidence: 99%

Interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy –A review

Ganichev

Golub²

2014

Physica Status Solidi (b)

204

205

View full text Add to dashboard Cite

show abstract

“…Motivated by the early steady-state experiments on spin lasers, it was predicted that the observed threshold reduction could also lead to desirable dynamic operation and the bandwidth enhancement. 19,70 Recent advances in electrical and optical spin injection 22,[67][68][69][71][72][73][74][75][76] suggest versatile opportunities for the modulation of spin lasers. In previous work on QW spin lasers we considered amplitude and polarization modulation (AM,PM).…”

Section: Small-signal Analysis For Spin Lasersmentioning

confidence: 99%

Spins Jump Another Threshold

Petukhov¹

2012

Physics

View full text Add to dashboard Cite

We explore similarities between the quantum wells and quantum dots used as optical gain media in semiconductor lasers. We formulate a mapping procedure which allows a simpler, often analytical, description of quantum well lasers to study more complex lasers based on quantum dots. The key observation in relating the two classes of laser is that the influence of a finite capture time on the operation of quantum dot lasers can be approximated well by a suitable choice of the gain compression factor in quantum well lasers. Our findings are applied to the rate equations for both conventional (spin-unpolarized) and spin lasers in which spin-polarized carriers are injected optically or electrically. We distinguish two types of mapping that pertain to the steady-state and dynamical operation respectively and elucidate their limitations.

show abstract

“…Therefore, the out-of-plane B eff induced by the Dresselhaus spin–orbit coupling provides τ s in the order of nanoseconds at RT, which is an order of magnitude longer than that of (100) QWs [ 14 ]. Taking advantage of these excellent features, slow light propagation via coherent population oscillation [ 16 ], long-distance spin transport [ 17 ], τ s modulation by introducing superlattice structures [ 18 ] as well as by applying gate vias [ 19 ], and circularly polarized lasing in vertical cavity surface emitting laser by optical spin injection [ 20 ] have been demonstrated in GaAs-based (110) QWs at RT.…”

Section: Introductionmentioning

confidence: 99%

Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

et al. 2021

Self Cite

View full text Add to dashboard Cite

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τPL), and electron spin relaxation times (τs) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature Tg (430–600 °C) and a high V/III flux ratio using As2. At 530 °C < Tg < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τPL~40 ns at RT, one order of magnitude longer than those reported so far. Long τs (~6 ns) is also observed at RT.

show abstract

Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells

Cited by 11 publications

References 15 publications

Interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy –A review

Interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy –A review

Spins Jump Another Threshold

Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

Contact Info

Product

Resources

About