Articles you may be interested inAl2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition J. Appl. Phys. 115, 073502 (2014); 10.1063/1.4866001Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal-insulator-semiconductor structures J. Vac. Sci. Technol. A 31, 01A128 (2013); 10.1116/1.4768170 Permeability and corrosion in ZrO2/Al2O3 nanolaminate and Al2O3 thin films grown by atomic layer deposition on polymersThe authors investigated moisture permeation for Al 2 O 3 barrier films grown by atomic layer deposition (ALD) on the two individual chemically distinct surfaces of a commercial (DuPont Teijin Films, Chester, VA) polyethylene terephthalate (PET) film. One surface is "bare" PET polymer, whereas the opposite surface is coated with a low friction "slip" layer to facilitate winding and unwinding of the polymer film on a roll. For early stage Al 2 O 3 film growth (<8 nm), the authors found that moisture permeation was less on the bare polymer side than the slip side but converged to same instrument limited value ($1 Â 10 À4 g H 2 O/m 2 day) for thicker films. However, thicker barrier films grown on the slip side experienced abrupt permeation breakthrough in longerterm Ca-testing at 60 C/85% RH, whereas equivalently grown barrier films on the bare PET-side were stable. Mildly etching the slip side in Ar, before depositing Al 2 O 3 , resulted in permeation performance equivalent to barriers grown on the bare polymer side. The authors present evidence that the etch pretreatment reduced incorporation of hydroxide during early stage growth of Al 2 O 3 by ALD, and this was critical for long-term, stable, low moisture permeation barrier films.