Effect of early stage growth on moisture permeation of thin-film Al2O3 grown by atomic layer deposition on polymers

Abstract

Articles you may be interested inAl2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition J. Appl. Phys. 115, 073502 (2014); 10.1063/1.4866001Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal-insulator-semiconductor structures J. Vac. Sci. Technol. A 31, 01A128 (2013); 10.1116/1.4768170 Permeability and corrosion in ZrO2/Al2O3 nanolaminate and Al2O3 thin films grown by atomic layer deposition on polymersThe authors investigated moisture permeation for Al 2 O 3 barrier films grown by atomic layer deposition (ALD) on the two individual chemically distinct surfaces of a commercial (DuPont Teijin Films, Chester, VA) polyethylene terephthalate (PET) film. One surface is "bare" PET polymer, whereas the opposite surface is coated with a low friction "slip" layer to facilitate winding and unwinding of the polymer film on a roll. For early stage Al 2 O 3 film growth (<8 nm), the authors found that moisture permeation was less on the bare polymer side than the slip side but converged to same instrument limited value ($1 Â 10 À4 g H 2 O/m 2 day) for thicker films. However, thicker barrier films grown on the slip side experienced abrupt permeation breakthrough in longerterm Ca-testing at 60 C/85% RH, whereas equivalently grown barrier films on the bare PET-side were stable. Mildly etching the slip side in Ar, before depositing Al 2 O 3 , resulted in permeation performance equivalent to barriers grown on the bare polymer side. The authors present evidence that the etch pretreatment reduced incorporation of hydroxide during early stage growth of Al 2 O 3 by ALD, and this was critical for long-term, stable, low moisture permeation barrier films.

Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

“…provides an effective protection layer for the CuCl. This is consistent with published work showing that ALD Al2O3 constitutes a good moisture diffusion barrier when applied to other materials [46].…”

“…There is no significant change to the excitonic absorption confirming the XPS results that 5 nm of ALD Al 2 O 3 provides an effective protection layer for the CuCl. This is consistent with published work showing that ALD Al 2 O 3 constitutes a good moisture diffusion barrier when applied to other materials [46]. provides an effective protection layer for the CuCl.…”

Investigating the Nucleation of AlOx and HfOx ALD on Polyimide: Influence of Plasma Activation

“…[15][16][17][18][19][20][21]. However, one of the largest applications of ALD on polymers is the development of flexible glass diffusion [22][23][24][25][26][27][28], moisture [29][30][31][32][33] or copper [34,35] barriers for the microelectronics industry. Specifically, in recent years, ALD has been widely used in hermetic barriers for the packaging of implantable medical devices [36][37][38][39][40][41][42][43][44][45][46].…”

“…Thus, the nucleation and early growth of the ALD ceramic are key to the polymer/ALD interface since they determine the type of interaction between both materials. Very thin ceramic layers (5-10 nm) are deposited to obtain a hermetic encapsulation for implantable devices [29][30][31][32][33]78,79]. Although single ALD layers provide a good degree of hermeticity that could be enough for short term implantation, the combination of ALD layers provides a high degree of hermeticity as required for long-term implantable devices [78,79,91,99].…”

ALD Grown ZnO on Polymeric Template

“…The deposition of ZnO thin films has been achieved by many methods such as plasma‐enhanced chemical vapor deposition (PE‐CVD), metal − organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), atomic layer deposition (ALD), electrodeposition, and chemical bath deposition (CBD) . In addition, several chemical methods such sol‐gel, hydrothermal, and other solvent chemical routes have been used to deposit ZnO thin films.…”