Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process

Lee, Jong Geol; Kim, Hyun Gi; Kim, Sung Soo

doi:10.1016/j.tsf.2015.01.040

Cited by 22 publications

(16 citation statements)

References 23 publications

(28 reference statements)

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“…125,126 We do note that the above mentioned film thicknesses are significantly higher than those typically utilized in traditional Si CMOS high-k dielectric applications where thicknesses of <10 nm are more common. [2][3][4][5][6][7][8] However, many of the applications involving these materials as diffusion barriers, 27,31,127 nano-resonators, 80,81 and piezoelectric transducers 43,87 can require significantly higher thicknesses of 20-1000 nm. Also, use of film thicknesses >100 nm minimize substrate 128 and interfacial thermal boundary resistance 129 effects that can complicate the mechanical and thermal property measurements, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…22 Due to exceptional thickness control and uniformity, atomic layer deposition (ALD) has become the preferred method for depositing most high-k dielectric materials in micro-/nano-electronic applications. 23 The low deposition temperature, 23 excellent surface topography coverage, [23][24][25] low pinhole/defect density, 26,27 high mass/atomic density, 28 and thermodynamic stability 29 of ALD high-k materials have further enabled these materials to serve additional roles in complex interference coatings 30 as well as in moisture, 31 oxygen, 32 and metal 33 diffusion barriers in hermetic packaging, 34 organic light emitting diode, 35 and metal interconnect 36 applications.…”

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confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…The rapid oxidation of Ca dots is attributed to the pinholes in the Al 2 O 3 thin lm deposited by thermal ALD at low temperature, which form direct pathways for watervapor permeation throughout the lm. 63,64 However, a signicantly better barrier performance was observed by the UV-ALD based Al 2 O 3 barrier lm (Bottom row): only 5, 14, and 21 Ca dots were oxidized in 120, 360, and 720 h, respectively. Less than 4% of the total Ca dots were found to be oxidized in 120 h exposure, while only 15% of the total Ca dots were oxidized in 720 h. Thirdly, direct measurement of WVTRs was performed for Al 2 O 3 thin lms deposited on PET substrates, by MOCON test under the standard exposure environment (i.e., 37.8 C, 100% RH).…”

Section: Water Diffusion Barrier Properties Of Al 2 O 3 Thin Lmsmentioning

confidence: 99%

UV-enhanced atomic layer deposition of Al₂O₃ thin films at low temperature for gas-diffusion barriers

et al. 2017

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“…The Ca test and MOCON instrument are the two most commonly used techniques for determining the WVTR, but both have disadvantages. The lowest detection limit achievable with the most sensitive commercial MOCON instrument is 5 x 10 -5 g.m -2 /day [12] while the main disadvantage of the Ca test is lengthy test durations which can be many months for materials with very low WVTRs. A less commonly used method for determining the WVTR is by means of HTO permeation, however only a few studies have used this technique [13][14][15] as it requires access to radioactive HTO.…”

Section: Introductionmentioning

confidence: 99%

Comparing three techniques to determine the water vapour transmission rates of polymers and barrier films

Jarvis

Evans

Cooling

et al. 2017

Surfaces and Interfaces

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Barrier films are required for a number of applications such as food packaging or organic electronics to prevent product degradation results from exposure to water vapour and oxygen. In order to determine the effectiveness of polymers and deposited barrier films to inhibit water permeation, the water vapour transmission rate (WVTR) needs to be measured. The calcium test, MOCON instrument and tritiated water permeation can all be used to determine the WVTR, but the values produced by these techniques have not been extensively compared. The WVTR of two polymer substrates and two barrier films deposited onto polymer substrates have been measured using these three techniques. For a polyethylene terephthalate substrate and a MOCON reference film, similar WVTR were observed for all three techniques. For two commercially available barrier films, variable WVTRs were observed and attributed to film defects. WVTR measurements play an essential role in the use of polymers and barrier films to retard water permeation, therefore an understanding of the advantages and disadvantages of each technique is of great importance.

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Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process

Cited by 22 publications

References 23 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

UV-enhanced atomic layer deposition of Al₂O₃ thin films at low temperature for gas-diffusion barriers

Comparing three techniques to determine the water vapour transmission rates of polymers and barrier films

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Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process

Cited by 22 publications

References 23 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

UV-enhanced atomic layer deposition of Al2O3 thin films at low temperature for gas-diffusion barriers

Comparing three techniques to determine the water vapour transmission rates of polymers and barrier films

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UV-enhanced atomic layer deposition of Al₂O₃ thin films at low temperature for gas-diffusion barriers