2017
DOI: 10.1088/1361-6463/aa920b
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Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

Abstract: We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen… Show more

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Cited by 57 publications
(23 citation statements)
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“…Hence, it is reasonable to assume that these components correspond to the first (FX-1LO) and the second (FX-2LO) exciton phonon replicas, which usually dominate the UV emission band from Regarding the third component at ∼3.1 eV, the energy differences with respect the FX-2LO component (105 and 116 eV for 1% and 4% of Al 3+ nominal content, respectively) are significantly larger than the ZnO phonon energy, indicating that it is not an additional phonon replica. Indeed, we notice that a component at ∼3.1 eV has been observed before in Al-doped ZnO and attributed to near-edge states associated with Al substitution of Zn[66]. Shallow donor states due to due to Al 3s electrons from substitutional Al in ZnO are predicted by density functional theory based calculations[67].…”
mentioning
confidence: 59%
“…Hence, it is reasonable to assume that these components correspond to the first (FX-1LO) and the second (FX-2LO) exciton phonon replicas, which usually dominate the UV emission band from Regarding the third component at ∼3.1 eV, the energy differences with respect the FX-2LO component (105 and 116 eV for 1% and 4% of Al 3+ nominal content, respectively) are significantly larger than the ZnO phonon energy, indicating that it is not an additional phonon replica. Indeed, we notice that a component at ∼3.1 eV has been observed before in Al-doped ZnO and attributed to near-edge states associated with Al substitution of Zn[66]. Shallow donor states due to due to Al 3s electrons from substitutional Al in ZnO are predicted by density functional theory based calculations[67].…”
mentioning
confidence: 59%
“…Greer et al [15] have employed gelatin as the structure-directing agent to fabricate twinned ZnO NCs. The removal of embedded gelatin in NCs requires calcination at 600 °C, which may in turn impact the physical properties on account of the known role of oxygen vacancies and defects on electron transport behavior of ZnO [2627]. But in our case no such high temperature processing is required at any stage.…”
Section: Resultsmentioning
confidence: 97%
“…[24] various Al Zn -O i complexes make a strong input to the yellow band at 550 nm. At the same time, the NBE bands of the Al-1 sample show a slight blue shift for doped samples moving the NBE to 370 nm (3.35 eV) [25].…”
Section: Optical Characteristicsmentioning
confidence: 84%