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The kinetics of growth for chemical deposition of normalCdS films from alkaline solutions of cadmium salts has been studied with respect to temperature of deposition and the relative concentrations of the various reactants in the solution. It has been established that the growth of the film takes place either by ion‐by‐ion condensation of Cd+2 and S−2 ions or by adsorption of colloidal particles of normalCdS formed in the solution, depending on the various deposition parameters and the method of preparation. The former process of growth results in thin, hard, adherent and specularly reflecting films, whereas the latter results in thick, powdery and diffusely reflecting films. Occurrence of different polymorphic phases of normalCdS (hexagonal and cubic) has been observed under different growth conditions. A model for growth mechanism has also been proposed.

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Cadmium selenide and lead selenide films have been deposited by a solution growth technique on single crystal germanium and silicon, glass, mica, and copper substrates. The effect of bath parameters (pH, temperature, and relative concentration of reactants) and the nature of the substrate on the rate of deposition and terminal thickness has been established. The structure of the films has also been studied. Based on the experimental results, a growth model has been proposed.

Anomalous decrease in effective damping parameter αeff in sputtered Ni81Fe19 (Py) thin films in contact with a very thin β-Ta layer without necessitating the flow of DC-current is observed. This reduction in αeff, which is also referred to as anti-damping effect, is found to be critically dependent on the thickness of β-Ta layer; αeff being highest, i.e., 0.0093 ± 0.0003 for bare Ni81Fe19(18 nm)/SiO2/Si compared to the smallest value of 0.0077 ± 0.0001 for β-Ta(6 nm)/Py(18 nm)/SiO2/Si. This anomalous anti-damping effect is understood in terms of interfacial Rashba effect associated with the formation of a thin protective Ta2O5 barrier layer and also the spin pumping induced non-equilibrium diffusive spin-accumulation effect in β-Ta layer near the Ta/Py interface which induces additional spin orbit torque (SOT) on the moments in Py leading to reduction in . The fitting of (tTa) revealed an anomalous negative interfacial spin mixing conductance, and spin diffusion length,. The increase in αeff observed above tTa = 6 nm is attributed to the weakening of SOT at higher tTa. The study highlights the potential of employing β-Ta based nanostructures in developing low power spintronic devices having tunable as well as low value of α.