Objective:To determine the frequency of hypocalcemia in term neonates with jaundice receiving phototherapy.Methods:This was a cross sectional study conducted at Neonatal intensive care unit, National Institute of Child Health, Karachi from 1st January 2014 to 30th December 2014. A total of 123 term neonates with jaundice of either gender managed by phototherapy were enrolled in the study. Gestational age was assessed through modified Ballard scoring. Duration of phototherapy was recorded. A sample of 3 ml of blood was sent to the laboratory for serum calcium level before initiating phototherapy and after 24 hours of continued phototherapy. All the data were recorded in the preformed proforma. Data was analyzed using SPSS version 19. P value <0.05 was taken as significant.Results:The mean age of the neonates was 8.35±6.74 days. Mean gestational age at the time of birth was 39.08±1.37 weeks. Mean duration of jaundice was 2.4±1.20 days. Mean duration of phototherapy was 1.74±0.98 days. Serum calcium level before and after 24 hours of initiating phototherapy was 8.73±0.68 mg/dl and 7.47±0.82mg/dl respectively Frequency of hypocalcemia in term jaundiced neonates receiving phototherapy were observed in 22.76% (28/123).Conclusions:The frequency of hypocalcemia is significant in the jaundiced neonates treated with phototherapy. One needs to be vigilant in dealing neonates in this context while serial monitoring for hypocalcemia and its complications should be considered in institutional policy and research priority.
We report on an all
chemical bath deposition (CBD) fabrication
of self-assembled vertically aligned heteroepitaxy grown (002)ZnO//(002)CdS ZnO/CdS core/shell nanorod (NR) arrays.
These single-technique processed NR arrays comprising of CdS QDs conformally
and epitaxially grown on faceted single-crystalline ZnO NRs achieve
effective charge separation and collection, resulting from visible
light driven highest ever, reported photocurrent density without any
postdeposition process step, unlike previous such studies. The low
ion-flux controlled ion-by-ion deposition induces chemical-epitaxy
growth mechanism, with a 38° tilt of CdS c-axis. Structural characterizations confirm the homogeneous growth
of (002) CdS QDs (size ∼30 nm) on hexagonal prismaticc-axis oriented ZnO NRs (400 nm diameter). Compared with
pristine ZnO NR array, a 20-fold enhancement in photocurrent density
(∼8.5 mA/cm2 at +1.0 V vs Ag/AgCl) under AM1.5 light
illumination is observed without any additional passivation/sensitization
layer, attributed to the enlarged defect-free sharp ZnO/CdS interface
and improved optical properties involving high visible light absorption
as well as suppressed recombination of photoinduced charge carriers
due to staircase type-II band alignment and hence effective charge
separation and transport. Low-temperature short-time anneal further
enhances the photocurrent density to 9–10 mA/cm2 and photoconversion efficiency to 4.4%. Our results demonstrate
that formation of atomically aligned interface is key to realizing
high performance junction without any postdeposition step and have
significant bearing on photoelectrochemical as well as photovoltaic
performance of ZnO/CdS radial junction devices.
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