Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells

Ismail, Muhammad; Ahmed, Ejaz; Talib, Ijaz; Khan, Tanveer Ahmed; Iqbal, Khalid; Nadeem, M.

doi:10.1016/j.tsf.2015.03.059

Cited by 28 publications

(13 citation statements)

References 34 publications

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“…Similarly, the I-V characteristic of Cerium oxide-based memory reported by Ismail et al [28] resembles the findings in [27], which have good linear fit to both P-F emission and Schottky emission. Anyhow, the observed current does not demonstrate strong correlation in the plot of ln(I/T 2 ) against 1/T, which is expected in Schottky emission.…”

Section: Poole-frenkel (P-f) Emissionsupporting

confidence: 85%

“…This conduction mechanism has been widely observed in HRS of several resistive switching devices that based on materials such as SnOx [24], ZnO [25,26], AlOx [27], CeOx [28], WOx [29], LaHoO3 [30] and etc. as listed in Table 2.…”

Section: Poole-frenkel (P-f) Emissionmentioning

confidence: 90%

“…While CF evolution is typically associated with thermal, electrical or ion migration [19,20], there is no consensus on the dominant conduction mechanism in resistive switching memory devices [21][22][23]. Among the commonly observed conduction mechanisms are: (i) Poole-Frenkel emission [24][25][26][27][28][29][30][31][32]; (ii) Schottky emission [33][34][35][36][37][38][39][40][41][42]; (iii) SCLC [43][44][45][46][47][48][49][50][51][52][53] (iv) trap-assisted tunneling [54][55][56][57][58][59]; and (v) hopping conduction [60][61][62][63][64][65]. To enhance the device performance and data retention property, it is crucial to identifying t...…”

Section: Introductionmentioning

confidence: 99%

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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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Section: Poole-frenkel (P-f) Emissionsupporting

confidence: 85%

Section: Poole-frenkel (P-f) Emissionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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“…But rare-earth oxide materials have proved themselves superior by representing better resistive switching (RS) characteristics for the development of NVM devices78. One of the rare-earth metal oxides is CeO 2 , which makes use of the oxygen getting ability of Ce.…”

mentioning

confidence: 99%

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Rana

Akbar

Ismail

et al. 2017

Sci Rep

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Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

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“…Figure 7 describes the proposed energy band diagram of CeO 2 and ZnO n-n-type semiconducting materials in the steady state. The difference between work functions of ZnO (4.35 eV) and CeO 2 (3.33 eV) is equal to 1.02 eV for the same electronic transition on the oxygen vacancy [ 30 ]. The lower work function of CeO 2 (3.33 eV) than that of ZnO (4.35 eV) enables the movement of electrons from CeO 2 to ZnO, giving rise to their higher concentration in the matrix.…”

Section: Resultsmentioning

confidence: 99%

Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

et al. 2018

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Memory devices with bilayer CeO2−x/ZnO and ZnO/CeO2−x heterostructures sandwiched between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at room temperature. N-type semiconductor materials were used in both device heterostructures, but interestingly, change in heterostructure and electroforming polarity caused significant variations in resistive switching (RS) properties. Results have revealed that the electroforming polarity has great influence on both CeO2−x/ZnO and ZnO/CeO2−x heterostructure performance such as electroforming voltage, good switching cycle-to-cycle endurance (~ 102), and ON/OFF ratio. A device with CeO2−x/ZnO heterostructure reveals good RS performance due to the formation of Schottky barrier at top and bottom interfaces. Dominant conduction mechanism of high resistance state (HRS) was Schottky emission in high field region. Nature of the temperature dependence of low resistance state and HRS confirmed that RS is caused by the formation and rupture of conductive filaments composed of oxygen vacancies.

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Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells

Cited by 28 publications

References 34 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

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