Role of surfaces and interfaces in solar cell manufacturing

Chandra, Abhijit; Anderson, Grant; Melkote, Shreyes N.; Gao, Wei; Haitjema, Han; Wegener, Konrad

doi:10.1016/j.cirp.2014.05.008

Cited by 35 publications

(18 citation statements)

References 86 publications

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“…However, considering the current state of the art, improving performance of GaAs cells requires a multithreaded approach that concentrates on reducing many different loss factors which affect final efficiency of the cell. Among them, it is possible to distinguish electrical, optical, and quantum losses, as it was reported in [3,4]. In particular, the quantum loss factor is strictly connected with the internal structure of the cell substrate.…”

Section: Introductionmentioning

confidence: 92%

Analysis of the Influence of Annealing Temperature on Mechanisms of Charge Carrier Transfer in GaAs in the Aspect of Possible Applications in Photovoltaics

Węgierek

Pietraszek

2019

Acta Phys. Pol. A

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The article presents the results of investigations of the mechanisms of electric charge transfer in gallium arsenide subjected to poly-energic implantation with hydrogen ions, as a potential base material dedicated for photovoltaic applications. The main objective of the research was to determine the relationship between the temperature of isochronous postimplantation annealing and the probability of electron jumping between energy levels as a function of operating temperature and to test the possibility of creating additional intermediate energy levels in the semiconductor band gap by ion implantation, which in practice could allow increase in the efficiency of solar energy conversion in photovoltaic cells made on the basis of gallium arsenide modified by ion implantation technology. The conducted research allowed to identify two additional energy levels with activation energy values of 0.17 eV and 1.1 eV.

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Section: Introductionmentioning

confidence: 92%

Analysis of the Influence of Annealing Temperature on Mechanisms of Charge Carrier Transfer in GaAs in the Aspect of Possible Applications in Photovoltaics

Węgierek

Pietraszek

2019

Acta Phys. Pol. A

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“…These physical properties have led to the use of TCOs in applications such as flat panel displays, which consist most notably of liquid crystal displays (LCD) and organic light emitting diodes (OLED), and in thin film solar cell applications such as amorphous Si, CuInGaSe 2 (CIGS), CdTe, and CuZnSbSe [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

Alexander

Sun²,

Sun³

et al. 2015

Journal of Alloys and Compounds

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a b s t r a c tThe electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of $5.5 Â 10 À4 ohm-cm, with a mobility $35 cm 2 /V S, and carrier concentrations $3 ⁄ 10 20 cm À3 . The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples >80%. InZnO has demonstrated properties adequate for photovoltaic applications.

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“…Distinctive advantage of HIT-IBC structures is the capability to absorb low-energy infrared radiation, what has been confirmed by external quantum efficiency measurements and reported in [3]. Consequently, many issues concerning possible further improvements of the efficiency of HIT-IBC cells are the topics of recent scientific discussions [4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Research on the Influence of Environmental Conditions on Electrical Parameters of Interdigitated Back Contact Monocrystalline Silicon Solar Cells

Billewicz¹

2018

ELECTROTECHNICAL REVIEW

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This article presents results of the experiment carried out on the samples of HIT-IBC solar cells. Devices under test have been placed in the climatic chamber in constant ambient temperature from a range (-20 ÷ 100)°C and exposed to irradiation of energy ranging from 700W/m 2 to 1250W/m 2 and spectral composition corresponding to solar spectrum. Measurements of I-V and P-V characteristics have been performed. Results of the analysis have been discussed in the context of photoconversion efficiency in variable irradiation conditions. Streszczenie. Niniejszy artykuł przedstawia wyniki badań ogniw słonecznych typu HIT-IBC. Obiekty badawcze zostały umieszczone w komorze klimatycznej, w stałej temperaturze z zakresu (-20 ÷ 100)°C i poddane działaniu promieniowania świetlnego o energii z zakresu od 700W/m 2 do 1250 W/m 2 i składzie widmowym odpowiadającym promieniowaniu słonecznemu. Przeprowadzono pomiary zależności prądu i mocy w funkcji napięcia ogniwa. Wyniki zostały przeanalizowane w kontekście sprawności konwersji energii słonecznej w warunkach zmiennego nasłonecznienia. (Badania wpływu warunków środowiskowych na parametry elektryczne ogniw słonecznych typu IBC z krzemu monokrystalicznego).

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Role of surfaces and interfaces in solar cell manufacturing

Cited by 35 publications

References 86 publications

Analysis of the Influence of Annealing Temperature on Mechanisms of Charge Carrier Transfer in GaAs in the Aspect of Possible Applications in Photovoltaics

Analysis of the Influence of Annealing Temperature on Mechanisms of Charge Carrier Transfer in GaAs in the Aspect of Possible Applications in Photovoltaics

Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

Research on the Influence of Environmental Conditions on Electrical Parameters of Interdigitated Back Contact Monocrystalline Silicon Solar Cells

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