The purpose of this paper is to discuss the different generations of photovoltaic cells and current research directions focusing on their development and manufacturing technologies. The introduction describes the importance of photovoltaics in the context of environmental protection, as well as the elimination of fossil sources. It then focuses on presenting the known generations of photovoltaic cells to date, mainly in terms of the achievable solar-to-electric conversion efficiencies, as well as the technology for their manufacture. In particular, the third generation of photovoltaic cells and recent trends in its field, including multi-junction cells and cells with intermediate energy levels in the forbidden band of silicon, are discussed. We also present the latest developments in photovoltaic cell manufacturing technology, using the fourth-generation graphene-based photovoltaic cells as an example. An extensive review of the world literature led us to the conclusion that, despite the appearance of newer types of photovoltaic cells, silicon cells still have the largest market share, and research into ways to improve their efficiency is still relevant.

This paper investigates the inductive contribution to AC conductance in the granular nanocomposites (Fe0.45Co0.45Zr0.10)x(Al2O3)1−x. The initial nanocomposites studied were manufactured in Ar+O2 atmosphere by ion-beam sputtering of the target containing Fe0.45Co0.45Zr0.10 and alumina stripes and then subjected to the annealing procedure in air over the temperature range 373 K < Ta < 873 K. These samples, before and after annealing, were studied using the temperature 77 K < Tp < 300 K and frequency 50 Hz < f < 1 MHz dependences of a real part of the admittance σ(T, f ). Analysis of the observed σ(f, T p ) dependences for x < 0.5 demonstrated that in the studied samples the equivalent circuits with the capacitive and noncoil-like inductive contributions can be accomplished. Just in this case, the capacitive properties of RLC circuit with the phase angle −90• ≤ θ L < 0• are exhibited at low frequencies and the inductive properties with 0• become apparent at high frequencies. A value of the critical frequency f R , where θ H changes sign, depends on the metallic phase concentration x, measuring temperature T p , and annealing temperature T a .

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The paper presents results on the effect of ion implantation (N+, Ne+ and Ar+) and annealing of silicon doped with B, P, or Sb on the increase of its permittivity. The results indicate that the permittivity increase is caused by jumping recharging between defects. The influence of various kinds of defects (divacancies, interstitial defects Si‐P3 and Si‐B2) on permittivity and tg δ of implanted silicon has been discussed.