Temperature dependence of the width of the deep-level band in silicon with a high concentration of defects

The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of Ne ++ neon ions. An analysis of electrical properties recorded at the annealing temperature of Ta = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.

Section: Introductionmentioning

confidence: 99%

Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with Ne⁺⁺Neon Ions

Węgierek¹,

Billewicz²

2011

“…The experimental frequency dependences, obtained for the annealing temperature of T a = 373 K have been under discussion. Implantation conditions and annealing temperature have been determined on the basis of earlier works [6,7]. An analysis of temperature dependences of capacity and conductivity has made it possible to estimate the values of conduction activation energy ∆E and defects relaxation time.…”

Section: Introductionmentioning

confidence: 99%

Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with Ne⁺Ions

Węgierek

Billewicz

2013

The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of Ne + ions (D = 1.5 × 10 14 cm −2 , E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of Ta = 373 K has been presented, concerning the inuence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have conrmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.

“…However, in order to confirm whether the intermediate band was actually formed, it is necessary to perform further analyses. In particular, it is necessary to implement a new analytical model, which takes into consideration the phenomena associated with the thermally activated mechanisms of carrier transport as it was described in [21]. Moreover, the influence of certain parameters of ion implantation, post-implantation treatment and testing conditions should also be considered.…”

Section: Discussionmentioning

confidence: 99%

Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes

Billewicz

Węgierek

Grudniewski³

et al. 2017

The main aim of the research was to verify if it is possible to create the intermediate energy levels in silicon by means of ion implantation as well as to confirm whether the intermediate band could arise. The tests covered recording of conductance and capacitance of antimony-doped silicon, implanted with Ne + ions. As a result, it was possible to identify a single deep level in the sample and determine its location in the band gap by estimating the value of activation energy.