Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with Ne⁺Ions

Abstract

The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of Ne + ions (D = 1.5 × 10 14 cm −2 , E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of Ta = 373 K has been presented, concerning the inuence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have conrmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.

Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant

“…The obtained experimental results and conclusions are in accordance with those presented in the articles [18,19], concerning electric conduction mechanisms in silicon of dierent electric parameters.…”

Tailoring the Internal Evaporator for Effective Ion Beam Production - Volatile vs. Non-Volatile Substances

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Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes

“…In contrast to our previous papers [16][17][18], in which silicon doped with boron and phosphorus was considered, as the object of current study antimony was chosen as a dopant. Such initial condition is due to the fact that antimony has the relative atomic mass and electron configuration different from the dopant elements used previously, which will allow investigating possible correlations in further comparative analyses.…”