Analysis of the Influence of Annealing Temperature  on Mechanisms of Charge Carrier Transfer in GaAs  in the Aspect of Possible Applications in Photovoltaics

Węgierek, P.; Pietraszek, Justyna

doi:10.12693/aphyspola.136.299

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…Other advantages to be mentioned are: controllable bandwidth and desirable optical absorption [2]. GaAs is a material that could be successfully used as a base of photovoltaic cells -it is reported that the material could increase substantially the efficiency of such cells up to 44.7% [6], as there is a strict correlation between the solar cell efficiency and the value of the band gap [7]. It is well known that using of ion implantation technology results in creation of additional energy levels, also in GaAs [8].…”

Section: Introductionmentioning

confidence: 99%

Thermal Desorption of Argon Implanted into Gallium Arsenide

Turek¹,

Droździel²,

Pyszniak³

et al. 2022

Adv. Sci. Technol. Res. J.

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Thermal desorption of Argon (Ar) implanted with energies 150 keV and 100 keV with fl uence 1×10 16 cm -2 into gallium arsenide is considered. A sudden release of Ar is observed in temperature range 1100-1180 K as a single narrow peak in TDS (Thermal Desorption Spectroscopy) spectra. This is accompanied by a strong background signal from atmospheric Ar trapped in various parts of the spectrometer. Desorption peak shift analysis allows estimation of desorption activation energy values -these are 3.6 eV and 2.5 eV for implantation energies 150 keV and 100 keV, respectively. These results are comparable to that measured for Ar implanted into germanium target.

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Section: Introductionmentioning

confidence: 99%

Thermal Desorption of Argon Implanted into Gallium Arsenide

Turek¹,

Droździel²,

Pyszniak³

et al. 2022

Adv. Sci. Technol. Res. J.

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“…One way to increase efficiency is to create additional energy levels. The work carried out for many years by our research team in this area has allowed us to gather experience in this field, which has been quoted in numerous articles [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells

et al. 2020

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The main goal of this work was to conduct a comparative analysis of the electrical properties of the silicon implanted with neon ions, depending on the dose of ions and the type of substrate doping, for the possibility of generating additional energy levels by ion implantation in terms of improving the efficiency of photovoltaic cells made on its basis. The article presents the results of research on the capacitance and conductance of silicon samples doped with boron and phosphorus, the structure of which was modified in the implantation process with Ne+ ions with energy E = 100 keV and different doses. The analysis of changes in electrical properties recorded at the annealing temperature of the samples Ta = 298 K, 473 K, 598 K, 673 K, and 873 K, concerned the influence of the test temperature in the range from 203 K to 373 K, as well as the frequency f from 100 Hz to 10 MHz, and voltage U from 0.25 V to 2 V. It was possible to detect intermediate bands in the tested samples and determine their position in the band gap by estimating the activation energy value. By means of implantation, it is possible to modify the width of the silicon energy gap, the value of which directly affects the efficiency of the photovoltaic cell made on its basis. By introducing appropriate defects into the silicon crystal lattice, contributing to a change in the value of the energy gap Eg, it is possible to increase the efficiency of the solar cell. On the basis of the obtained results, it can be seen that the highest activation energies are achieved for samples doped with phosphorus.

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Photovoltaic Cell Generations and Current Research Directions for Their Development

2022

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The purpose of this paper is to discuss the different generations of photovoltaic cells and current research directions focusing on their development and manufacturing technologies. The introduction describes the importance of photovoltaics in the context of environmental protection, as well as the elimination of fossil sources. It then focuses on presenting the known generations of photovoltaic cells to date, mainly in terms of the achievable solar-to-electric conversion efficiencies, as well as the technology for their manufacture. In particular, the third generation of photovoltaic cells and recent trends in its field, including multi-junction cells and cells with intermediate energy levels in the forbidden band of silicon, are discussed. We also present the latest developments in photovoltaic cell manufacturing technology, using the fourth-generation graphene-based photovoltaic cells as an example. An extensive review of the world literature led us to the conclusion that, despite the appearance of newer types of photovoltaic cells, silicon cells still have the largest market share, and research into ways to improve their efficiency is still relevant.

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Analysis of the Influence of Annealing Temperature on Mechanisms of Charge Carrier Transfer in GaAs in the Aspect of Possible Applications in Photovoltaics

Cited by 3 publications

References 13 publications

Thermal Desorption of Argon Implanted into Gallium Arsenide

Thermal Desorption of Argon Implanted into Gallium Arsenide

Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells

Photovoltaic Cell Generations and Current Research Directions for Their Development

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