Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

Abstract

a b s t r a c tThe electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of $5.5 Â 10 À4 ohm-cm, with a mobility $35 cm 2 /V S, and carrier concentrations $3 ⁄ 10 20 cm À3 . The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples >80%. InZnO has demonstrated properties adequate for photovoltaic applications.

ZnO UV Photodetectors Modified by Ag Nanoparticles Using All-Inkjet-Printing

“…To fabricate UV detector is one of the important applications of ZnO, because the UV photodetectors are in great demand in various fields and the direct wide bandgap of ZnO is 3.37 eV, which corresponding to the UV wavelength of about 365 nm [ 7 ]. The fabrication processes of conventional ZnO-based devices are expensive and time-consuming, because they contain photolithography and vacuum deposition-based growth process such as MBE, chemical vapor deposition (CVD), and magnetron sputtering [ 8 – 11 ]. A cheap solution has been adopted by the sol-gel deposition method, because the method does not need expensive equipment [ 12 , 13 ].…”

Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method

“…Zinc oxide (ZnO) is a compound semiconductor with a direct bandgap of 3.2∼3.37 eV and a lager exciton binding energy of 60 meV at room temperature (RT), which results in potential applications in optoelectronics and solar cells [1][2][3]. A highly conductive and transparent ZnO layer can be prepared by doping with group IIIA elements, such as B, Al, Ga, and In [4][5][6][7]. Doped ZnO films exhibit good electrical conductivity and optical transmission in the visible region.…”