RHBD Technique for Single-Event Charge Cancellation in Folded-Cascode Amplifiers

Atkinson, N. M.; Blaine, R. W.; Kauppila, J. S.; Armstrong, S. E.; Loveless, T. D.; Hooten, Nicholas C.; Holman, W.T.; Massengill, L.W.; Warner, Jeffrey H.

doi:10.1109/tns.2013.2240316

Cited by 12 publications

(7 citation statements)

References 20 publications

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“…Although Xe ions have a higher LET than Kr ions, the cross-section for Xe-ion-induced ASETs is lower than the cross-section of Kr-ion-induced ASETs. This paradox can be explained through the pulse quenching phenomenon [2], [64]- [66], which has been previously observed or used to mitigate SETs in other analog or digital circuits such as digital inverters, current sources, switched capacitor amplifiers, continuous time amplifiers, folded cascode amplifiers and differential circuits design [6], [23], [63], [67]- [74]. In the next section we justify the measured results by focussing on the key topological difference between the two circuit classes, i.e.…”

Section: Pulse Quenching Phenomena In Measured Resultsmentioning

confidence: 99%

Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Andreou

Javanainen

Rominski

et al. 2016

IEEE Trans. Nucl. Sci.

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Abstract-An architectural performance comparison of bandgap voltage reference variants, designed in a 0.18 µm CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space applications. The paper includes an analysis on how pulse quenching occurs within the indispensable current mirror, which is used in every analog circuit.

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Section: Pulse Quenching Phenomena In Measured Resultsmentioning

confidence: 99%

Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Andreou

Javanainen

Rominski

et al. 2016

IEEE Trans. Nucl. Sci.

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“…Particularly in sub-micron technologies, charge sharing effects have been observed in digital [4], [19] and analog [12], [13], [15], [20] circuits. This can cause multiple errors by a single ion strike or even pulse quenching in ion-induced transients, resulting in a reduced overall sensitivity of the system against SEE [12], [13], [15], [20], [21]. Nevertheless, these effects are difficult to model or predict: main approaches to modeling involve complex, high computational cost simulations including technology computer assisted design tools (TCAD) integrated in complex multi-physical environments [22]- [25].…”

Section: Analogmentioning

confidence: 99%

“…Given the fact that transistors of the differential stage were laid out to maximize device matching, it is logical to consider charge sharing effects as observed in digital [4], [6], [19], [41], [42] and analog circuits [20], [43], [44] built in sub-micron technologies. In fact, charge sharing has been proposed as a mechanism to desensitize sections of analog circuits and evaluated through laser experiments [10], [12], [13], [45]. Fig.…”

Section: A Experimental Observation Of Charge Sharingmentioning

confidence: 99%

“…The same interpretation can be considered to explain the pulses triggered by impacts on N 3 -N 4 (same nodes A and B in the differential stage), where the drains of both transistors are closely located in 2x2 arrays with a common centroid layout, with distances between transistor drains as low as 0.5µm. It is important to highlight at this point that although the charge sharing effect has been strongly considered to mitigate ASET sensitivity [10], [12], [15], [45] and that although the observed waveforms in our circuit are quenched pulses from the simulated electrical response (shorter duration), the bipolar underdamped characteristic can pose a severe failure condition.…”

Section: A Experimental Observation Of Charge Sharingmentioning

confidence: 99%

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Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Fontana

Pazos

Aguirre

et al. 2019

IEEE Trans. Nucl. Sci.

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In this work, charge sharing effects on Analog Single Event Transients are experimentally observed in a fully-custom designed, 180nm CMOS Operational Amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single node collection for the closed loop characteristics of the circuit under test. Layout of these transistors are consistent with charge sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout.A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.

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“…The delay cell consists of a pair of two inverters whose outputs are coupled in a feed-forward manner through a transmission gate. For RHBD amplifier design in the integrator, we apply the sensitive node active charge cancellation technique to bias circuit to protect sensitive nodes and the differential charge cancellation technique to promote charge sharing [14,15]. The push-pull follower as an output buffer should provide a low output resistance in operational amplifier, which causes a low impedance node at the integrator output.…”

Section: Implementation Of Fbvcomentioning

confidence: 99%

A radiation-hardened-by-design phase-locked loop using feedback voltage controlled oscillator

Jung

Roveda

2015

Sixteenth International Symposium on Quality Electronic Design

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This paper presents a radiation-hardened-by-design (RHBD) phase-locked loop (PLL) which utilizes a feedback voltage controlled oscillator (FBVCO) to mitigate a single event transient (SET) strike. Whenever the SET pulse attacks the input control voltage of VCO, VCO gives rise to a frequency disturbance and PLL produces a huge jitter at the output clock. The proposed FBVCO consists of an open loop VCO, an integrator and a switched-capacitor resistor. The input transfer function of the FBVCO has a low-pass characteristic so that the FBVCO can reduce any perturbation at the input control voltage. In addition, the proposed RHBD PLL reduces size by using one loop filter (LF) and charge pump (CP) compared to prior works. We simulate the proposed scheme in 130 nm low power CMOS technology at 1.5V supply. The output frequency variation of the proposed PLL from the SET strike is 75% smaller than that of previous PLL at 300 MHz. This RHBD PLL consumes 6.2 mW at 400 MHz output frequency. KeywordsPhase-locked loop (PLL), radiation-hardened-by-design (RHBD), voltage controlled oscillator (VCO), loop filter (LF)

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RHBD Technique for Single-Event Charge Cancellation in Folded-Cascode Amplifiers

Cited by 12 publications

References 20 publications

Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

A radiation-hardened-by-design phase-locked loop using feedback voltage controlled oscillator

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