2007
DOI: 10.1016/j.jcrysgro.2006.11.117
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RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates

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Cited by 10 publications
(6 citation statements)
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References 11 publications
(11 reference statements)
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“…By using AFM, the surface roughness was evaluated to be 1.8 nm and 1.2 nm for the off-angle of 4° and 8°, respectively. On the contrary, when using onaxis substrate, there exist some voids which have often been observed for InN epitaxial layer [2,4,5] although the surface is smooth, as shown in Fig. 1(b).…”
Section: Methodsmentioning
confidence: 94%
See 1 more Smart Citation
“…By using AFM, the surface roughness was evaluated to be 1.8 nm and 1.2 nm for the off-angle of 4° and 8°, respectively. On the contrary, when using onaxis substrate, there exist some voids which have often been observed for InN epitaxial layer [2,4,5] although the surface is smooth, as shown in Fig. 1(b).…”
Section: Methodsmentioning
confidence: 94%
“…While sapphire has been widely used as the substrate for the growth of InN, SiC [2][3][4] is also a promising candidate because of its electrical conduction and high thermal conductivity, which are useful for device applications. In the present paper, we have investigated the direct growth of InN on 4H-SiC (0001) substrates with off-angles (4° and 8°) by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and succeeded in improving the surface morphology as well as the luminescence properties of InN.…”
Section: Introductionmentioning
confidence: 99%
“…This new generation of efficient devices should be characterized by high‐quality materials with low optical control power, high speed operation and improved working performance at room temperature. From this point of view, low‐dimensional InN‐based semiconductor structures such as InN multi‐quantum‐wells (MQWs) 5–9 or quantum dots (QDs) 10–13 can attain the required specifications taking advantage of the tunability of their operation wavelength through band‐gap engineering. Furthermore, these heterostructures are attractive for photonic applications because they exhibit strong quantum confinement effects, which should lead to an enhanced linear and nonlinear response at resonant wavelengths.…”
Section: Introductionmentioning
confidence: 99%
“…We have previously reported molecular beam epitaxy growth of high-quality hexagonal InN (h-InN) films on 3C-SiC (001) substrates with h-InN (0001) || 3C-SiC (001) and h-InN (1-100) || 3C-SiC (110) utilizing the small mismatch between h-InN (1-100) and 3C-SiC (110) [2]. In addition, we have reported the growth of InN/InGaN multiple quantum well (MQW) structures on 3C-SiC (001) substrates [3]. In this study, we report on the photoluminescence from hexagonal InN/InGaN multiple quantum well (MQW) structures grown on 3C-SiC (001) substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE).…”
Section: Introductionmentioning
confidence: 99%