RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates

Hirano, Shinya; Inoue, Takamichi; Shikata, G.; Orihara, M.; Hijikata, Yasuto; Yaguchi, Hiroyuki; Yoshida, Sadafumi

doi:10.1016/j.jcrysgro.2006.11.117

Cited by 10 publications

(6 citation statements)

References 11 publications

(11 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By using AFM, the surface roughness was evaluated to be 1.8 nm and 1.2 nm for the off-angle of 4° and 8°, respectively. On the contrary, when using onaxis substrate, there exist some voids which have often been observed for InN epitaxial layer [2,4,5] although the surface is smooth, as shown in Fig. 1(b).…”

Section: Methodsmentioning

confidence: 94%

“…While sapphire has been widely used as the substrate for the growth of InN, SiC [2][3][4] is also a promising candidate because of its electrical conduction and high thermal conductivity, which are useful for device applications. In the present paper, we have investigated the direct growth of InN on 4H-SiC (0001) substrates with off-angles (4° and 8°) by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and succeeded in improving the surface morphology as well as the luminescence properties of InN.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

RF‐MBE growth of InN on 4H‐SiC (0001) with off‐angles

Orihara

Takizawa

Sato

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We have grown InN on 4H‐SiC (0001) substrates with various off‐angles by RF‐N2 plasma molecular beam epitaxy (RF‐MBE). Scanning electron microscope observation revealed that InN films grown on 4H‐SiC (0001) substrates with off‐angles of 4° and 8° are very smooth and that there are no voids which have often observed for InN epitaxial layers. X‐ray diffraction reciprocal space maps for InN grown on 4H‐SiC (0001) showed that the c‐axes of InN grown on 4H‐SiC 4° and 8° off substrates are inclined by 0.35° and 0.8°, respectively, toward the misorientation of the substrate while the c‐axis of InN is parallel to that of 4H‐SiC for the on‐axis substrate. Strong PL peak was observed from InN grown on 4° off substrate at 0.68 eV at 15 K. The PL peak was clearly observed even at room temperature and simply shifted to lower energies with increasing temperature. The difference in the PL peak energy between at 15 K and 300 K was 20 meV, which is reasonable taking into account the difference in the thermal coefficients of InN and SiC (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Methodsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

RF‐MBE growth of InN on 4H‐SiC (0001) with off‐angles

Orihara

Takizawa

Sato

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…This new generation of efficient devices should be characterized by high‐quality materials with low optical control power, high speed operation and improved working performance at room temperature. From this point of view, low‐dimensional InN‐based semiconductor structures such as InN multi‐quantum‐wells (MQWs) 5–9 or quantum dots (QDs) 10–13 can attain the required specifications taking advantage of the tunability of their operation wavelength through band‐gap engineering. Furthermore, these heterostructures are attractive for photonic applications because they exhibit strong quantum confinement effects, which should lead to an enhanced linear and nonlinear response at resonant wavelengths.…”

Section: Introductionmentioning

confidence: 99%

Infrared photoluminescence of high In‐content InN/InGaN multiple‐quantum‐wells

Valdueza-Felip¹,

Rigutti²,

Naranjo³

et al. 2011

Physica Status Solidi (a)

View full text Add to dashboard Cite

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-mm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at $0.73 eV with a full width at half maximum of $86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of $12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of $16%.

show abstract

“…We have previously reported molecular beam epitaxy growth of high-quality hexagonal InN (h-InN) films on 3C-SiC (001) substrates with h-InN (0001) || 3C-SiC (001) and h-InN (1-100) || 3C-SiC (110) utilizing the small mismatch between h-InN (1-100) and 3C-SiC (110) [2]. In addition, we have reported the growth of InN/InGaN multiple quantum well (MQW) structures on 3C-SiC (001) substrates [3]. In this study, we report on the photoluminescence from hexagonal InN/InGaN multiple quantum well (MQW) structures grown on 3C-SiC (001) substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE).…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C‐SiC (001) substrates by molecular beam epitaxy

Hirano

Inoue

Shikata

et al. 2008

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

We have studied photoluminescence from hexagonal InN/InGaN multiple quantum well structures grown on 3C‐SiC (001) substrates with an InGaN underlayer by plasma assisted molecular beam epitaxy. We have observed photoluminescence spectra of InN/InGaN MQWs with various well widths. The photoluminescence peak related to quantum wells was clearly observed even at room temperature and found to shift to higher energies with decreasing well width due to the quantum confinement effect. We also discuss the effect of the built‐in electric fields on the PL peak energy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates

Cited by 10 publications

References 11 publications

RF‐MBE growth of InN on 4H‐SiC (0001) with off‐angles

RF‐MBE growth of InN on 4H‐SiC (0001) with off‐angles

Infrared photoluminescence of high In‐content InN/InGaN multiple‐quantum‐wells

Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C‐SiC (001) substrates by molecular beam epitaxy

Contact Info

Product

Resources

About