2010
DOI: 10.1002/pssc.200983441
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RF‐MBE growth of InN on 4H‐SiC (0001) with off‐angles

Abstract: We have grown InN on 4H‐SiC (0001) substrates with various off‐angles by RF‐N2 plasma molecular beam epitaxy (RF‐MBE). Scanning electron microscope observation revealed that InN films grown on 4H‐SiC (0001) substrates with off‐angles of 4° and 8° are very smooth and that there are no voids which have often observed for InN epitaxial layers. X‐ray diffraction reciprocal space maps for InN grown on 4H‐SiC (0001) showed that the c‐axes of InN grown on 4H‐SiC 4° and 8° off substrates are inclined by 0.35° and 0.8°… Show more

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