Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

Jantawongrit, P.; Sanorpim, Sakuntam; Yaguchi, Hiroyuki; Orihara, M.; Limsuwan, Pichet

doi:10.1088/1674-4926/36/8/083002

“…The contrast of the image is weak, indicating that our InN film is smooth and is free from the common surface non-homogeneities such as large crystal grains and In-rich droplets. 6,11 It should be mentioned that non-optimal ALD growth condition will lead to rougher surface and In-rich clusters as observed in the literature. 24 A smooth surface is further shown by the topographical atomic force micrograph of the InN surface (Fig.…”

mentioning

confidence: 93%

“…Therefore, InN deposition typically results in separated crystalline islands or films with high density of structural defects. Chemical vapor deposition 6,7 , hydride vapor phase epitaxy 8 , sputtering 9 and molecular beam epitaxy 10,11 (MBE) have been employed for growth of InN to study the bulk properties. MBE has also been used to prepare InN monolayers embedded in a GaN matrix for short-period superlattice.…”

mentioning

confidence: 99%

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Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

Hsu¹,

Deminskyi²,

Martinovic³

et al. 2020

Preprint

0

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<div>Indium nitride (InN) is a highly promising material for high frequency electronics given its</div><div>low band gap and high electron mobility. The development of InN-based devices is hampered</div><div>by the limitations in depositing very thin InN films of high quality. We demonstrate growth of</div><div>high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).</div><div>High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth</div><div>and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface</div><div>roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.</div>

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“…Therefore, InN deposition typically results in separated crystalline islands or films with high density of structural defects. Chemical vapor deposition 6,7 , hydride vapor phase epitaxy 8 , sputtering 9 and molecular beam epitaxy 10,11 (MBE) have been employed for growth of InN to study the bulk properties. MBE has also been used to prepare InN monolayers embedded in a GaN matrix for short-period superlattice.…”

mentioning

confidence: 99%

“…Metallic In, which is a common inclusion in InN thin films or on the surface, seen as a peak at 33 o , is not detected in our films. 11 On the other hand, no peak is observed in a grazing incidence XRD (GI-XRD) 2θ scan in the range of 20-90° using a fixed 0.5° incident angle under current geometry. By tilting the sample 90 o (χ = 90°), the diffraction peaks associated with (101 ̅ 0) and (112 ̅ 0) of InN should be revealed under their corresponding orientations.…”

mentioning

confidence: 99%

Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

Hsu¹,

Deminskyi²,

Martinovic³

et al. 2020

Preprint

View full text Add to dashboard Cite

<div>Indium nitride (InN) is a highly promising material for high frequency electronics given its</div><div>low band gap and high electron mobility. The development of InN-based devices is hampered</div><div>by the limitations in depositing very thin InN films of high quality. We demonstrate growth of</div><div>high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).</div><div>High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth</div><div>and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface</div><div>roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.</div>

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Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Imran

¹

,

Sulaman

²

,

Yousaf

³

et al. 2022

Adv Materials Inter

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The fabrication of high‐speed electronic and communication devices has rapidly grown the demand for high mobility semiconductors. However, their high cost and complex fabrication process make them less attractive for the consumer market and industrial applications. Indium nitride (InN) can be a potential candidate to fulfill industrial requirements due to simple and low‐cost fabrication process as well as unique electronic properties such as narrow direct bandgap and high electron mobility. In this work, 3 µm thick InN epilayer is grown on (0001) gallium nitride (GaN)/Sapphire template under In‐rich conditions with different In/N flux ratios by molecular beam epitaxy. The sharp InN/GaN interface monolayers with the In‐polar growth are observed, which assure the precise control of the growth parameters. The directly probed electron mobility of 3610 cm2 V‐1 s‐1 is measured with an unintentionally doped electron density of 2.24 × 1017 cm‐3. The screw dislocation and edge dislocation densities are calculated to be 2.56 × 108 and 0.92 × 1010 cm‐2, respectively. The step‐flow growth with the average surface roughness of 0.23 nm for 1 × 1 µm2 is confirmed. The high quality and high mobility InN film make it a potential candidate for high‐speed electronic/optoelectronic devices.

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Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

Cited by 11 publications

References 27 publications

Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

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