. Hg, 78.30.Fs, 81.15.Hi Cubic InN films have been grown on MgO substrates with cubic GaN underlayers by RF-N 2 plasma MBE. By changing the growth conditions, we clarified the growth temperature and In flux dependence of the quality of cubic InN films. It was found the surface of cubic InN films grown at relatively higher temperatures was smooth and that the hexagonal phase content in the InN films decreased with increasing In flux. Based on the findings, we have successfully obtained a c-InN film with high phase-purity and a smooth surface. We have carried out micro Raman scattering measurements for the high-quality cubic InN film. Raman peaks were clearly observed at 596 cm -1 and 467 cm -1, which are attributed to longitudinal optical and transverse optical phonon modes of cubic InN, respectively.

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We report on the improvement of the surface morphology of a ‐plane InN films grown by RF molecular beam epitaxy. By using low‐temperature (LT) InN buffer layers, we could successfully obtain InN films with a smooth surface. The full width at half maximum values of the x‐ray diffraction (11‐20) rocking curve along the [0001] InN direction were 2870 arcsec and 3410 arcsec for a ‐plane InN samples grown at 500°C with and without LT‐InN buffer layers, respectively. Thus, we could improve also the crystalline quality of a ‐plane InN films by using LT‐InN buffer layers. We observed strong polarization anisotropy in the photoluminescence spectra of a ‐plane InN, which is typical of nonpolar wurtzite III‐nitride films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)