Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C‐SiC (001) substrates by molecular beam epitaxy

Abstract

We have studied photoluminescence from hexagonal InN/InGaN multiple quantum well structures grown on 3C‐SiC (001) substrates with an InGaN underlayer by plasma assisted molecular beam epitaxy. We have observed photoluminescence spectra of InN/InGaN MQWs with various well widths. The photoluminescence peak related to quantum wells was clearly observed even at room temperature and found to shift to higher energies with decreasing well width due to the quantum confinement effect. We also discuss the effect of the built‐in electric fields on the PL peak energy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Elucidating the Optical Properties of Novel Heterolayered Materials Based on MoTe2–InN for Photovoltaic Applications

“…In fact, there have been proposals of incorporating nanoparticles and few layers of wurtzite InN to enhance the efficiency of dye-sensitized solar cells. , However, due to the difficulties of synthesizing it in bulk form, which is strongly related to the substrate lattice mismatch, it has been the least studied among the nitrides. To date, the development of new experimental techniques regarding control in growth and fabrication of nanostructures has allowed for synthesized hexagonal wurtzite InN thin films − and down to its bilayer form . Hence, by combining such achievements with exfoliation techniques, one can foresee a favorable scenario toward realization of single layer h-InN, which have been theoretically predicted to be as stable as other already synthesized few-layer III–V semiconductors such as h-BN and, more recently, h-AlN …”