RF and Linearity Parameter Analysis of Junction-less Gate All Around (JLGAA) MOSFETs and their dependence on Gate Work Function

Raut, Pratikhya; Nanda, Umakanta

doi:10.1007/s12633-021-01312-z

Cited by 31 publications

(23 citation statements)

References 25 publications

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“…38,39 This asymmetry is due to the use of different electrode materials (Au and Pt) with different work functions. 40,41…”

Section: Resultsmentioning

confidence: 99%

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Dielectric response of high-κ hafnium oxide under finite electric field: nonlinearities from ab initio and experimental points of view

Khaldi,

Ferhi,

Larbi

et al. 2023

Phys. Chem. Chem. Phys.

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“…38,39 This asymmetry is due to the use of different electrode materials (Au and Pt) with different work functions. 40,41…”

Section: Resultsmentioning

confidence: 99%

“…38,39 This asymmetry is due to the use of different electrode materials (Au and Pt) with different work functions. 40,41 Non-linearities in the high frequency range from the I-V characteristics…”

Section: Nonlinearities In the Low Frequency Rangementioning

confidence: 99%

Dielectric response of high-κ hafnium oxide under finite electric field: nonlinearities from ab initio and experimental points of view

Khaldi,

Ferhi,

Larbi

et al. 2023

Phys. Chem. Chem. Phys.

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“…we use the FINFET structure as it improves the control of the gate by reducing the short the effects of the device, whereas better transconductance and linearity could be gained 7 . Anyhow, the GaN‐based FINFET which has a very thin fin width could obtain positive threshold voltage for enhancement‐mode device applications 8 . Due to the numerous advantages over the conventional planar HEMT, such as better reduction in short channel effects (SCE) and higher electron velocity GaN FINFET are being studied for RF and power electronics applications.…”

Section: Introductionmentioning

confidence: 99%

“…7 Anyhow, the GaN-based FINFET which has a very thin fin width could obtain positive threshold voltage for enhancement-mode device applications. 8 Due to the numerous advantages over the conventional planar HEMT, such as better reduction in short channel effects (SCE) and higher electron velocity GaN FINFET are being studied for RF and power electronics applications. Gallium Nitride (GaN) high electron mobility transistor (HEMT) is being choosey chronically for many applications, especially in radar and mobile communication networks.…”

Section: Introductionmentioning

confidence: 99%

Performance analysis of GaN‐FINFET for RFIC application with respect to different FinWidth's

Reddy

Panda

2023

Int J Numerical Modelling

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GaN has become a prevailing semiconductor in case of power and RF applications. The higher ranking material parameters of GaN, like wider band‐gap, the higher breakdown electric field as well as higher electron velocity when compared to materials like Si, SiC, GaAs etc; allow GaN FINFET to reveal potential advantages such as high voltage and high frequency applications. In this work, a comprehensive study on RF and linearity analysis on Heterojunction‐free GaN layer FINFET through visual technology computer‐aided design (TCAD) device simulator is been illustrated. The influence of varying the Finwidth's of the device on numerous RF parameters like drain current, transconductance (gm), output conductance (gd), gate capacitances(Cgd and Cgs), cut‐off frequency (fT) are studied. And also, the impact of varying the Finwidth's of the device on the numerous linearity parameters like gm2, gm3, VIP3, IIP3, 1 dB compression point were also studied. It is been observed that the higher Finwidth value is more worthy for radio frequency integrated circuit (RFIC) applications.

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“…z E-mail: uk_nanda@yahoo.co.in ECS Journal of Solid State Science and Technology, 2023 12 031010 This article provides comprehensive information regarding various types of Junctionless FET's along with its application in various fields. By comparing various structures many RF and linear parameters 18,19 analysis can be done at a glance. This manuscript also outlines a brief summary of device modeling approaches and application in various fields.…”

mentioning

confidence: 99%

Review—Recent Trends on Junction-Less Field Effect Transistors in Terms of Device Topology, Modeling, and Application

Raut¹,

Nanda²,

Panda³

2023

ECS J. Solid State Sci. Technol.

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Junction-less field effect transistors, also known as JLFETs, are widely regarded as the most promising candidate to replace the conventional metal oxide semiconductor field effect transistors (MOSFETs) currently used in integrated circuit technology. These FETs are less likely to have short channel effects (SCEs) than devices with junctions, as shown by their remarkable subthreshold slope and drain induced barrier lowering (DIBL). Due to its gate coupling, the gate-all-around (GAA) JLFET is a better contender to uphold Moore's law than other existing device architectures and regular JLFET, allowing more precise channel tuning. Among GAA and JLFET at the same technology node, the SCE is kept to a minimum in GAA. Until now, no comprehensive review of the various JLFET structures and modeling techniques for the analysis of their various device parameters have been provided in a single resource. From device evaluation and application to qualitative and quantitative parameter analysis studies likewise subthreshold swing, DIBL and switching ratio, this review provides comprehensive information on the various structures of Junctionless and GAA JLFETs. Furthermore, various device modeling techniques of JLFETs for enhancing the device's characteristics and its application in various semiconductor industries are provided.

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RF and Linearity Parameter Analysis of Junction-less Gate All Around (JLGAA) MOSFETs and their dependence on Gate Work Function

Cited by 31 publications

References 25 publications

Dielectric response of high-κ hafnium oxide under finite electric field: nonlinearities from ab initio and experimental points of view

Dielectric response of high-κ hafnium oxide under finite electric field: nonlinearities from ab initio and experimental points of view

Performance analysis of GaN‐FINFET for RFIC application with respect to different FinWidth's

Review—Recent Trends on Junction-Less Field Effect Transistors in Terms of Device Topology, Modeling, and Application

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