2014
DOI: 10.1109/jstqe.2013.2293274
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Review of Silicon Photonics Foundry Efforts

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Cited by 327 publications
(177 citation statements)
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“…In particular, we increased the nominal CD to 120 nm and 150 nm, for the continuously apodized coupler. These dimensions are typically accepted by the silicon photonics foundries using 193 nm DUV lithography [6,10,11,13]. As can be observed in Figs.…”
Section: Coupler Apodizationmentioning
confidence: 91%
See 1 more Smart Citation
“…In particular, we increased the nominal CD to 120 nm and 150 nm, for the continuously apodized coupler. These dimensions are typically accepted by the silicon photonics foundries using 193 nm DUV lithography [6,10,11,13]. As can be observed in Figs.…”
Section: Coupler Apodizationmentioning
confidence: 91%
“…Using Si waveguide layers thicker than 220 nm generally results in a substantially increased grating directionality [3,8,11,12]. However, the SOI with 220-nm-thick silicon presently dominates in multi project wafer (MPW) shuttles, offered by the publicly accessible silicon photonic foundries [10,13]. To date, the state-of-the-art solutions to maximize the grating directionality exploit comparatively complex structures [14][15][16][17][18][19][20][21][22][23][24][25], including backside wafer processing and metal mirror deposition [14][15][16][17], or bonding dielectric mirrors [3,6,7,[18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…Coupling the optical ports to the interposer will necessitate passive photonics elements such as couplers and waveguides on the interposer itself. To enable such elements, the silicon interposer will have to include SOI cross sections similar to the ones supported by the 2D Si photonics platforms of IBM [89], STMicroelectronics [90], or IME [91].…”
Section: Photonics Integrationmentioning
confidence: 99%
“…Deviations between design and experiments point to the need for further investigations of the minimum feature dimensions. Foundry fabricated silicon (Si) photonics seek to implement highly sophisticated photonic integrated circuits (PICs) at low cost by using the mature manufacturing process of microelectronics [1][2][3]. The high refractive index contrast in Si photonic platforms not only allows for compact device footprints but also makes possible device concepts that can take advantage of the strong optical confinement and scattering (e.g., grating couplers, micro-resonators, photonic crystals) [4][5][6].…”
mentioning
confidence: 99%