Review of SiGe process technology and its impact on RFIC design

Das, Aloke Kumar; Huang, Margaret; Mondal, J.; Kaczman, D.; Shurboff, C.; Cosentino, S.

doi:10.1109/mwsym.2002.1011586

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…Over the past decades, the device performance of silicon germanium heterojunction bipolar transistors (SiGe HBTs) has been significantly improved to satisfy the growing need for microelectronic fields [1], [2]. Compared with Si bipolar junction transistors (BJTs), SiGe HBTs have shown great potential in extreme environments due to their excellent total dose resistance, such as high-energy particle detectors [3], [4], military [5], [6] and space-based applications [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Li¹,

Liu

et al. 2021

IEEE Access

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The degradation characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) under different bias modes (forward, cutoff and saturation) during irradiation were reported after multiple pulsed neutron-gamma irradiation at room temperature. The radiation-sensitive parameters of the test samples, including base current IB, collector current IC and DC current gain β, were measured and compared before and after every reactor n-γ pulse irradiation. The test results show that IB increased with increasing fluence, and IC slightly increased in the low base-emitter voltage VBE region (approximately from 0.4 V to 0.5 V) and decreased in the high-VBE region (approximately VBE>0.5 V). Moreover, the degradation degree of the test samples was different under different bias conditions. The performance of the test samples under cutoff bias mode displayed the most serious degradation, while those under forward bias mode suffered minimum damage. Meanwhile, the time-dependent annealing characteristics of the DC current gain for SiGe HBTs at various bias conditions were compared and analyzed.

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Section: Introductionmentioning

confidence: 99%

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Li¹,

Liu

et al. 2021

IEEE Access

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Improving the high frequency performance of SiGe HBT with new lateral structure and process

Yang

Shi²,

Liu³

et al. 2006

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

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After the shortage of the conventional lateral structure of SiGe HBT was analyzed, A new lateral structure was presented. In the meantime, the new fabrication process named buried metal self-aligned technique was designed. The measured frequency features show that the cut-off frequency of the device up to 12.3GHz and the maximum oscillation frequency achieves 5.7GHz.Compared to the conventional lateral structure and process, the values of and of SiGe HBT based on the new lateral structure and process have been increased 17% and 18.75% respectively. This indicates that the new lateral structure and buried metal self-aligned process is effective to improve the high frequency performance of SiGe HBT.

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Wafer-Level Packaging Technology for High-<tex>$Q$</tex>On-Chip Inductors and Transmission Lines

Carchon

Raedt

Beyne

2004

IEEE Trans. Microwave Theory Techn.

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Review of SiGe process technology and its impact on RFIC design

Cited by 3 publications

References 23 publications

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Improving the high frequency performance of SiGe HBT with new lateral structure and process

Wafer-Level Packaging Technology for High-<tex>$Q$</tex>On-Chip Inductors and Transmission Lines

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Review of SiGe process technology and its impact on RFIC design

Cited by 3 publications

References 23 publications

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Improving the high frequency performance of SiGe HBT with new lateral structure and process

Wafer-Level Packaging Technology for High-&lt;tex&gt;$Q$&lt;/tex&gt;On-Chip Inductors and Transmission Lines

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Product

Resources

About

Wafer-Level Packaging Technology for High-<tex>$Q$</tex>On-Chip Inductors and Transmission Lines