2004
DOI: 10.1109/tmtt.2004.825656
|View full text |Cite
|
Sign up to set email alerts
|

Wafer-Level Packaging Technology for High-<tex>$Q$</tex>On-Chip Inductors and Transmission Lines

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
32
0

Year Published

2007
2007
2018
2018

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 83 publications
(32 citation statements)
references
References 16 publications
0
32
0
Order By: Relevance
“…The achieved performances in terms of Q PEAK and SRF are in the current state-of-the-art for integrated inductors [5,11].…”
Section: Devicementioning
confidence: 73%
“…The achieved performances in terms of Q PEAK and SRF are in the current state-of-the-art for integrated inductors [5,11].…”
Section: Devicementioning
confidence: 73%
“…5(c)). Then, characteristics of some high-Q above-IC planar inductors [13] are reported in Fig. 5, as well.…”
Section: Resultsmentioning
confidence: 99%
“…5, as well. The process, as described in [13], is very close to best available IPD technologies: the inductor spiral is a 10 µm thick copper strip integrated on a 28 µm low r thick insulating layer of benzocyclobutene (BCB), with a 10 µm thick copper underpass implemented 12 µm underneath. This time, it can be observed that the area of these inductors is about twice the area of 3-D solenoids ( Fig.…”
Section: Resultsmentioning
confidence: 99%
“…BCB has good dielectric properties and mechanical chericteristics and verified realiability, and so it has been the most widely used insulation material for IPD or other passivation applications (Tilmans H. A C et al, 2003;Carchon G. J. et al, 2005). Based on the above-stated device achitecture, materials and fabrication technologies, many IPD devices have been developed and practically used due to their good RF performances, compact size and high manufacture tolerance at serval companies like IMEC (Carchon G. J. et al, 2005;Tilmans H. A C et al, 2003), Sychip (Davis P. et al, 1998), Telephus (Jeong I-H. et al, 2002;Kim D. et al, 2003), Philips (Graauw A. et al, 2000;Pulsford N., 2002), TDK (CHEN R. et al, 2005), Fujitsu (Mi X. et al, 2007;Mi X. et al, 2008). IMEC IPD used borosilicate glass, TaN resistors, Ta2O5 capacitors and electropalated Cu for coils and interconnects.…”
Section: Dielectric Materials For Insulation and Passivation Layersmentioning
confidence: 99%