Improving the high frequency performance of SiGe HBT with new lateral structure and process

Abstract

After the shortage of the conventional lateral structure of SiGe HBT was analyzed, A new lateral structure was presented. In the meantime, the new fabrication process named buried metal self-aligned technique was designed. The measured frequency features show that the cut-off frequency of the device up to 12.3GHz and the maximum oscillation frequency achieves 5.7GHz.Compared to the conventional lateral structure and process, the values of and of SiGe HBT based on the new lateral structure and process have been increased 17% and 18.75% respectively. This indicates that the new lateral structure and buried metal self-aligned process is effective to improve the high frequency performance of SiGe HBT.