Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

Sze, Simon M.; Irvin, J.C.

doi:10.1016/0038-1101(68)90012-9

Cited by 682 publications

(209 citation statements)

References 5 publications

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“…Hageman et al reported a value of µ e ∼ 5000 cm 2 /V s for homoepitaxial GaAs layer with a comparable doping level. 37 In the eighties, Akiyama et al 14,38 have grown GaAs directly on Si(001) substrates. They claimed that they were able to grow APB-free materials with film thickness about 3 µm and that they obtained a mobility of 5200 cm 2 /V s. This mobility decreases to 2000 cm 2 /V s in presence of APB showing their detrimental effect.…”

Section: -2mentioning

confidence: 99%

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

et al. 2016

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Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

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Section: -2mentioning

confidence: 99%

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

et al. 2016

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“…3,4 This interest is motivated by its high carrier mobilities, 5 the compatibility with Si, which makes feasible the integration with Si-based technology, and its optimal properties for gammaray detection. 3,4 The development of future high-mobility devices based on Ge requires basic research for process optimization, since the mechanisms of damage generation and amorphization in Ge associated to the introduction of dopants by ion implantation are not fully understood yet.…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics simulations of damage production by thermal spikes in Ge

López¹,

Pelaz²,

Santos³

et al. 2012

Journal of Applied Physics

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Molecular dynamics simulation techniques are used to analyze damage production in Ge by the thermal spike process and to compare the results to those obtained for Si. As simulation results are sensitive to the choice of the inter-atomic potential, several potentials are compared in terms of material properties relevant for damage generation, and the most suitable potentials for this kind of analysis are identified. A simplified simulation scheme is used to characterize, in a controlled way, the damage generation through the local melting of regions in which energy is deposited. Our results show the outstanding role of thermal spikes in Ge, since the lower melting temperature and thermal conductivity of Ge make this process much more efficient in terms of damage generation than in Si. The study is extended to the modeling of full implant cascades, in which both collision events and thermal spikes coexist. Our simulations reveal the existence of bigger damaged or amorphous regions in Ge than in Si, which may be formed by the melting and successive quenching induced by thermal spikes. In the particular case of heavy ion implantation, defect structures in Ge are not only bigger, but they also present a larger net content in vacancies than in Si, which may act as precursors for the growth of voids and the subsequent formation of honeycomb-like structures.

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“…Summaries of results with regard to energy levels and carrier capture cross sections for several metals obtained in those early studies, may be found in Refs. [1][2][3][4]. A general picture that emerges is that transition metals in germanium predominantly form multiple-acceptor centres corresponding with several deep levels in the band gap.…”

Section: Introductionmentioning

confidence: 99%