Resistivity and morphology of TiSi2 formed on Xe+-implanted polycrystalline silicon

Kuwano, Hiroki; Phillips, J. R.; Mayer, J. W.

doi:10.1063/1.103295

Cited by 32 publications

(15 citation statements)

References 11 publications

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“…3 It is not affected by surface modification by ion implantation or ion mixing either. 4,5 It has been proposed 6 that a lower surface energy is associated with the C49 phase rather than the C54 phase which allows the former to nucleate more easily than the latter. Should this mechanism be operative, the interface energies of the C49 phase must always be lower than those of the C54 phase independent of how the sample is prepared and regardless of the environment in which the silicide phases are found.…”

Section: ͓S0003-6951͑96͒01833-5͔mentioning

confidence: 99%

Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum

Mouroux

Zhang

Kaplan

et al. 1996

Applied Physics Letters

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Section: ͓S0003-6951͑96͒01833-5͔mentioning

confidence: 99%

Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum

Mouroux

Zhang

Kaplan

et al. 1996

Applied Physics Letters

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“…They include rapid thermal processing, refractory metal ion implantation, and preamorphization of the silicon substrate prior to titanium deposition. [6][7][8] Pulsed laser beams are known to offer the advantage of rapidly heating and cooling localized areas near the top surface regions, while the underlying substrate remains at a much lower temperature. 9 Currently, a two-step anneal is employed for the formation of titanium selfaligned silicide (Salicide).…”

Section: Introductionmentioning

confidence: 99%

Laser-induced titanium disilicide formation for submicron technologies

Chong

Pey

Wee

et al. 2001

Journal of Elec Materi

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A great deal of studies on thin-film silicides have been conducted over the past 15 years due to their applications in the fabrication of complementary metal oxide semiconductor devices. 1-7 Silicides can significantly reduce the contact resistance of the gate electrode and the source/drain regions as compared to nonsilicided structures. In particular, titanium disilicide (TiSi 2 ) has been used extensively as a contact material in ultra-large-scale integration technology because of its low electrical resistivity and good thermal stability. 2,3 TiSi 2 is a polymorphic material and may exist either as a high resistivity (ϳ60-90 ⍀cm) base-centered orthorhombic C49 phase or a low resistivity (ϳ15-20 ⍀cm) face-centered orthorhombic C54 phase. 2-4 When titanium reacts with silicon, the high resistivity C49 phase forms at temperatures ranging between 550 and 650°C and then transforms into the low resistivity C54 phase at annealing temperatures greater than 650°C. The C49 structure usually forms first due to a lower barrier to nucleation that has been attributed to a lower surface energy of this phase. On the other hand, the subsequent transformation from the C49 to the C54 phase is limited by a low driving force and a high activation energy. 3,4 Currently, a two-step anneal process is employed for the silicidation of titanium. The first rapid thermal anneal (RTA) step is to achieve the C49 TiSi 2 phase, and the second step is to form the low resistivity C54 TiSi 2 . However, as the width of the polysilicon line decreases to sub-0.25 m, conversion of C49 TiSi 2 to C54 phase becomes increasingly difficult. This is because the C49 to C54 phase transformation nucleates only at locations where three C49 grains intersect and the number of such intersection points (triple grain boundaries) is reduced as the gate length/polysilicon linewidth decreases. 5-7 As a consequence, the TiSi 2 films will be composed of a mixture of C49 and C54 phase and have a higher resistivity than if they are completely in the C54 phase. The need to completely form the C54 phase in submicron structures has encouraged numerous efforts to increase the density of C54 nucleation sites. They include rapid thermal processing, refractory metal ion implantation, and preamorphization of the silicon substrate prior to titanium deposition. [6][7][8] Pulsed laser beams are known to offer the advantage of rapidly heating and cooling localized areas near the top surface regions, while the underlying substrate remains at a much lower temperature. 9,10 Currently, a two-step anneal is employed for the formation of titanium selfaligned silicide (Salicide). The first rapid thermal anneal (RTA) step is to achieve the C49 TiSi 2 phase, and the second step is to form the low resistivity C54 phase. However, as the width of the polysilicon line decreases, conversion of C49 to C54 TiSi 2 becomes increasingly difficult. This is because the C49 to C54 phase transformation nucleates only at locations where three C49 grains intersect and the number of such intersection points i...

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“…reducing the C49 TiSi 2 grain size, with moderate success. The various methods that have been attempted include pre-amorphization of Si by Xe 7 and As, 8 and implantation through metal. 9 All the above methods succeeded in lowering the transformation temperature by 50-100°C.…”

Section: Introductionmentioning

confidence: 99%

Laser-induced formation of titanium silicides

Chen

Shen

Chen

et al. 1999

Surf. Interface Anal.

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In this article, we report on the laser‐induced formation of both C49 and C54 TiSi2 films with fine grains using Q‐switched Nd : YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro‐Raman spectroscopy, high‐resolution transmission electron microscopy, energy‐dispersive spectrometry and atomic force microscopy. The TiSi2 films synthesized are single‐phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid‐state reaction rather than liquid‐phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology. Copyright © 1999 John Wiley & Sons, Ltd.

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Resistivity and morphology of TiSi2 formed on Xe+-implanted polycrystalline silicon

Abstract: Resistivityprocess relationships in TiSi2 formed from Ti-Si reaction couples

Cited by 32 publications

References 11 publications

Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum

Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum

Laser-induced titanium disilicide formation for submicron technologies

Laser-induced formation of titanium silicides

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