Laser-induced formation of titanium silicides

Abstract

In this article, we report on the laser‐induced formation of both C49 and C54 TiSi2 films with fine grains using Q‐switched Nd : YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro‐Raman spectroscopy, high‐resolution transmission electron microscopy, energy‐dispersive spectrometry and atomic force microscopy. The TiSi2 films synthesized are single‐phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid‐state reaction rather than liquid‐phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology. Copyright © 1999 John Wiley & Sons, Ltd.

Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature

“…Chen et al 30 have also reported that the transformation temperature into C54-TiSi2 can be significantly reduced by pulsed laser annealing. Moreover, the technologically favorable C54-TiSi2 phase has been obtained directly after the laser annealing step 30,32,33 .…”

“…Pulsed laser annealing has also been investigated and several important benefits have been demonstrated. First, due to its fast ramping rate and short anneal duration, nanosecond laser annealing (UV-NLA) has been found to enable the formation of smaller grains of C49-TiSi2 than RTA [30][31][32] , increasing the density of C54-TiSi2 nucleation sites. Chen et al 30 have also reported that the transformation temperature into C54-TiSi2 can be significantly reduced by pulsed laser annealing.…”

“…First, due to its fast ramping rate and short anneal duration, nanosecond laser annealing (UV-NLA) has been found to enable the formation of smaller grains of C49-TiSi2 than RTA [30][31][32] , increasing the density of C54-TiSi2 nucleation sites. Chen et al 30 have also reported that the transformation temperature into C54-TiSi2 can be significantly reduced by pulsed laser annealing. Moreover, the technologically favorable C54-TiSi2 phase has been obtained directly after the laser annealing step 30,32,33 .…”

“…investigation performed so far on leveraging UV-NLA for the formation of TiSi2 have been mainly conducted with small laser beams (diameter ~160-200 µm) with a near Gaussian shape scanning the surface with a controlled speed, resulting in a large number of pulses at the same location (typically more than 100 pulses) [30][31][32][33][34][35][36] . Such studies did not properly explore the effect of the laser energy density.…”

2020 Index IEEE Transactions on Control of Network Systems Vol. 7

“…Networked Control Systems; TCNS June 2020 558-567 Wang, D., see Wang, Y., TCNS June 2020 977-989 Wang, D., see Li, F., TCNS Sept. 20201523-1533 Wang, L., see Lin, X., TCNS June 2020 592-602 Wang, P., see Xiang, L., TCNS June 2020 807-817 Wang, P., Wen, G., Yu, X., Yu, W., and Lv, Y., Consensus Disturbance Rejection for Linear Multiagent Systems With Directed Switching Communication Topologies; TCNS March 2020 254-265 Wang, S., Taha, A.F., Gatsis, N., and Giacomoni, M.H., Receding Horizon Con-trol for Drinking Water Networks: The Case for Geometric Programming; TCNS Sept. 2020 1151-1163 Wang, W., see Lin, F., TCNS March 2020 53-63 Wang, X., see Chen, H., TCNS March 2020 189-200 Wang, Y., Zhao, M., Yang, W., Zhou, N., and Cassandras, C.G., Collision-Free Trajectory Design for 2-D Persistent Monitoring Using Second-Order Agents; TCNS June 2020 545-557 Wang, Y., Shan, M., and Wang, D., Motion Wang, Y., Zhang, W., and Yu, L., A Linear Active Disturbance Rejection Control Approach to Position Synchronization Control for Networked Interconnected Motion System; TCNS 1746-1756nous Distributed Power Control of Multimicrogrid Systems; TCNS 1960-1973Wei, G., see Ju, Y., TCNS Sept. 20201489-1499 Wei, Q., Pedarsani, R., and Coogan, S., Mixed Autonomy in Ride-Sharing Net-works; TCNS Dec. 1940Dec.…”